TY - JOUR
T1 - High-power optically pumped VECSEL using a double-well resonant periodic gain structure
AU - Fan, Li
AU - Hader, Jörg
AU - Schillgalies, Marc
AU - Fallahi, Mahmoud
AU - Zakharian, Aramais R.
AU - Moloney, Jerome V.
AU - Bedford, Robert
AU - Murray, James T.
AU - Koch, Stephan W.
AU - Stolz, Wolfgang
N1 - Funding Information:
Manuscript received March 9, 2005; revised May 16, 2005. This work was supported by Air Force Office of Scientific Research through an MRI Program F49620-02-1-0380 and by Deutsche Forschungsgemeinschaft. L. Fan, J. Hader, M. Schillgalies, and M. Fallahi are with Optical Sciences Center, University of Arizona, Tucson AZ 85721, USA (e-mail: [email protected]). A. R. Zakharian and J. V. Moloney are with Arizona Center for Mathematical Science, University of Arizona, Tucson, AZ 85721 USA. R. Bedford is with Air Force Research Laboratory, Wright-Patterson AFB, OH 45433 USA. J. T. Murray is with Areté Associates, Tucson, Arizona 857512348 USA. S. W. Koch and W. Stolz are with Material Sciences Center and Department of Physics, Philips Universität Marburg, Marburg 35032, Germany. Digital Object Identifier 10.1109/LPT.2005.853536
PY - 2005/9
Y1 - 2005/9
N2 - We present the design and fabrication of an optically pumped vertical-external-cavity surface-emitting lasers with double-well resonant periodic gain structure. Each double-well consists of two 4-nm-thick InGaAs strained quantum wells. The double-well provides optimum overlap between the quantum wells and the antinodes of the standing wave of laser signal at high-power and high-temperature operation. The structure is more tolerant to variation of the growth, processing, and operating temperature for maintaining high modal gain. For a 230-μm diameter pump spot, over 4-W continuous-wave output with a slope efficiency of 39% is demonstrated at 30 °C without thermal rollover.
AB - We present the design and fabrication of an optically pumped vertical-external-cavity surface-emitting lasers with double-well resonant periodic gain structure. Each double-well consists of two 4-nm-thick InGaAs strained quantum wells. The double-well provides optimum overlap between the quantum wells and the antinodes of the standing wave of laser signal at high-power and high-temperature operation. The structure is more tolerant to variation of the growth, processing, and operating temperature for maintaining high modal gain. For a 230-μm diameter pump spot, over 4-W continuous-wave output with a slope efficiency of 39% is demonstrated at 30 °C without thermal rollover.
KW - Double-quantum-well
KW - High-power laser
KW - InGaAs
KW - Optical pumping
KW - Resonant periodic gain (RPG)
KW - Semiconductor laser
KW - Vertical-external-cavity surface-emitting laser (VECSEL)
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U2 - 10.1109/LPT.2005.853536
DO - 10.1109/LPT.2005.853536
M3 - Article
AN - SCOPUS:27144526972
SN - 1041-1135
VL - 17
SP - 1764
EP - 1766
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
IS - 9
ER -