High-power optically pumped semiconductor laser at 1040 nm

Tsuei Lian Wang; Yushi Kaneda; J. M. Yarborough; Jörg Hader; Jerome V. Moloney; Alexej Chernikov; Sangam Chatterjee; Stephan W. Koch; Bernardette Kunert; Wolfgang Stolz

doi:10.1109/LPT.2010.2043731

High-power optically pumped semiconductor laser at 1040 nm

Tsuei Lian Wang
, Yushi Kaneda
, J. M. Yarborough
, Jörg Hader
, Jerome V. Moloney
, Alexej Chernikov
, Sangam Chatterjee
, Stephan W. Koch
, Bernardette Kunert
, Wolfgang Stolz

Research output: Contribution to journal › Article › peer-review

85 Scopus citations

Abstract

We demonstrate near-diffraction limited (M² ≈ 1.5) output up to 23.8 W with optical-to-optical efficiency 27% and slope efficiency 32.4% and 40.7 W of multimode output from an optically pumped semiconductor laser at 1040 nm. Temperature-dependent photoluminescence measurements confirm accurate epitaxial growth according to the design thereby enhancing the effective gain.

Original language	English (US)
Article number	5422654
Pages (from-to)	661-663
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	22
Issue number	9
DOIs	https://doi.org/10.1109/LPT.2010.2043731
State	Published - 2010

Keywords

Micro-cavity resonance
Optically pumped semiconductor laser (OPSL)
Power scaling

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2010.2043731

Cite this

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title = "High-power optically pumped semiconductor laser at 1040 nm",

abstract = "We demonstrate near-diffraction limited (M2 ≈ 1.5) output up to 23.8 W with optical-to-optical efficiency 27\% and slope efficiency 32.4\% and 40.7 W of multimode output from an optically pumped semiconductor laser at 1040 nm. Temperature-dependent photoluminescence measurements confirm accurate epitaxial growth according to the design thereby enhancing the effective gain.",

keywords = "Micro-cavity resonance, Optically pumped semiconductor laser (OPSL), Power scaling",

author = "Wang, \{Tsuei Lian\} and Yushi Kaneda and Yarborough, \{J. M.\} and J{\"o}rg Hader and Moloney, \{Jerome V.\} and Alexej Chernikov and Sangam Chatterjee and Koch, \{Stephan W.\} and Bernardette Kunert and Wolfgang Stolz",

note = "Funding Information: Manuscript received December 16, 2009; revised February 09, 2010; accepted February 15, 2010. Date of publication March 01, 2010; date of current version April 09, 2010. This work was supported by a U.S Joint Technology Multidisciplinary Research Initiative grant FA9550-07-1-0573.",

year = "2010",

doi = "10.1109/LPT.2010.2043731",

language = "English (US)",

volume = "22",

pages = "661--663",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - High-power optically pumped semiconductor laser at 1040 nm

AU - Wang, Tsuei Lian

AU - Kaneda, Yushi

AU - Yarborough, J. M.

AU - Hader, Jörg

AU - Moloney, Jerome V.

AU - Chernikov, Alexej

AU - Chatterjee, Sangam

AU - Koch, Stephan W.

AU - Kunert, Bernardette

AU - Stolz, Wolfgang

N1 - Funding Information: Manuscript received December 16, 2009; revised February 09, 2010; accepted February 15, 2010. Date of publication March 01, 2010; date of current version April 09, 2010. This work was supported by a U.S Joint Technology Multidisciplinary Research Initiative grant FA9550-07-1-0573.

PY - 2010

Y1 - 2010

N2 - We demonstrate near-diffraction limited (M2 ≈ 1.5) output up to 23.8 W with optical-to-optical efficiency 27% and slope efficiency 32.4% and 40.7 W of multimode output from an optically pumped semiconductor laser at 1040 nm. Temperature-dependent photoluminescence measurements confirm accurate epitaxial growth according to the design thereby enhancing the effective gain.

AB - We demonstrate near-diffraction limited (M2 ≈ 1.5) output up to 23.8 W with optical-to-optical efficiency 27% and slope efficiency 32.4% and 40.7 W of multimode output from an optically pumped semiconductor laser at 1040 nm. Temperature-dependent photoluminescence measurements confirm accurate epitaxial growth according to the design thereby enhancing the effective gain.

KW - Micro-cavity resonance

KW - Optically pumped semiconductor laser (OPSL)

KW - Power scaling

UR - https://www.scopus.com/pages/publications/77950994021

UR - https://www.scopus.com/pages/publications/77950994021#tab=citedBy

U2 - 10.1109/LPT.2010.2043731

DO - 10.1109/LPT.2010.2043731

M3 - Article

AN - SCOPUS:77950994021

SN - 1041-1135

VL - 22

SP - 661

EP - 663

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 9

M1 - 5422654

ER -

High-power optically pumped semiconductor laser at 1040 nm

Abstract

Keywords

ASJC Scopus subject areas

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