Abstract
We describe a high-performance 1.3-μm InGaAsP/InP distributed feedback buried heterostructure laser which is compatible with all-vapor-phase growth technology. Current confinement is provided by metalorganic vapor-phase growth of semi-insulating InP blocking layers. The laser has a small-signal bandwidth of 12.5 GHz, a large signal digital capability at 16 Gb/s, and maintains single-frequency operation to output powers as high as 23 mW.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 4785-4787 |
| Number of pages | 3 |
| Journal | Journal of Applied Physics |
| Volume | 64 |
| Issue number | 9 |
| DOIs | |
| State | Published - 1988 |
| Externally published | Yes |
ASJC Scopus subject areas
- General Physics and Astronomy
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