High power emission from strained DQW circular-grating surface-emitting DBR lasers

M. Fallahi; M. Dion; F. Chatenoud; I. M. Templeton; R. Barber

doi:10.1049/el:19931415

High power emission from strained DQW circular-grating surface-emitting DBR lasers

M. Fallahi, M. Dion, F. Chatenoud, I. M. Templeton, R. Barber

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

High power operation of circular-grating surface-emitting distributed Bragg reflector lasers is demonstrated. The structure is a strained InGaAs/GaAs double quantum well grown by one step MBE. Circular gratings are defined by electron beam lithography. A surface emission power over lOOmW is obtained.

Original language	English (US)
Pages (from-to)	2117-2118
Number of pages	2
Journal	Electronics Letters
Volume	29
Issue number	24
DOIs	https://doi.org/10.1049/el:19931415
State	Published - Nov 1993
Externally published	Yes

Keywords

Distributed Bragg reflector lasers
Semiconductor quantum wells

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19931415

Cite this

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title = "High power emission from strained DQW circular-grating surface-emitting DBR lasers",

abstract = "High power operation of circular-grating surface-emitting distributed Bragg reflector lasers is demonstrated. The structure is a strained InGaAs/GaAs double quantum well grown by one step MBE. Circular gratings are defined by electron beam lithography. A surface emission power over lOOmW is obtained.",

keywords = "Distributed Bragg reflector lasers, Semiconductor quantum wells",

author = "M. Fallahi and M. Dion and F. Chatenoud and Templeton, \{I. M.\} and R. Barber",

year = "1993",

month = nov,

doi = "10.1049/el:19931415",

language = "English (US)",

volume = "29",

pages = "2117--2118",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons Inc.",

number = "24",

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TY - JOUR

T1 - High power emission from strained DQW circular-grating surface-emitting DBR lasers

AU - Fallahi, M.

AU - Dion, M.

AU - Chatenoud, F.

AU - Templeton, I. M.

AU - Barber, R.

PY - 1993/11

Y1 - 1993/11

N2 - High power operation of circular-grating surface-emitting distributed Bragg reflector lasers is demonstrated. The structure is a strained InGaAs/GaAs double quantum well grown by one step MBE. Circular gratings are defined by electron beam lithography. A surface emission power over lOOmW is obtained.

AB - High power operation of circular-grating surface-emitting distributed Bragg reflector lasers is demonstrated. The structure is a strained InGaAs/GaAs double quantum well grown by one step MBE. Circular gratings are defined by electron beam lithography. A surface emission power over lOOmW is obtained.

KW - Distributed Bragg reflector lasers

KW - Semiconductor quantum wells

UR - https://www.scopus.com/pages/publications/0027695839

UR - https://www.scopus.com/inward/citedby.url?scp=0027695839&partnerID=8YFLogxK

U2 - 10.1049/el:19931415

DO - 10.1049/el:19931415

M3 - Article

AN - SCOPUS:0027695839

SN - 0013-5194

VL - 29

SP - 2117

EP - 2118

JO - Electronics Letters

JF - Electronics Letters

IS - 24

ER -

High power emission from strained DQW circular-grating surface-emitting DBR lasers

Abstract

Keywords

ASJC Scopus subject areas

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