Abstract
High power operation of circular-grating surface-emitting distributed Bragg reflector lasers is demonstrated. The structure is a strained InGaAs/GaAs double quantum well grown by one step MBE. Circular gratings are defined by electron beam lithography. A surface emission power over lOOmW is obtained.
Original language | English (US) |
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Pages (from-to) | 2117-2118 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 29 |
Issue number | 24 |
DOIs | |
State | Published - Nov 1993 |
Externally published | Yes |
Keywords
- Distributed Bragg reflector lasers
- Semiconductor quantum wells
ASJC Scopus subject areas
- Electrical and Electronic Engineering