@inproceedings{aa09bb6613d94b0888289a97395b6df7,
title = "High-power 1.25 μm InAs QD VECSEL based on resonant periodic gain structure",
abstract = "We compare an InAs quantum dot (QD) vertical external-cavity surface-emitting laser (VECSEL) design consisting of 4 groups of 3 closely spaced QD layers with a resonant periodic gain (RPG) structure, where each of the 12 QD layers is placed at a separate field antinode. This increased the spacing between the QDs, reducing strain and greatly improving device performance. For thermal management, the GaAs substrate was thinned and indium bonded to CVD diamond. A fiber-coupled 808 nm diode laser was used as pump source, a 1% transmission output coupler completed the cavity. CW output powers over 4.5 W at 1250 nm were achieved.",
keywords = "InAs quantum dot, Resonant periodic gain, SDL, VECSEL",
author = "Albrecht, {Alexander R.} and Rotter, {Thomas J.} and Hains, {Christopher P.} and Andreas Stintz and Guofeng Xin and Wang, {Tsuei Lian} and Yushi Kaneda and Moloney, {Jerome V.} and Malloy, {Kevin J.} and Ganesh Balakrishnan",
note = "Funding Information: This research was conducted at the University of New Mexico and was funded by the following grants: AFOSR FA9550-09-1-0202 and AFOSR FA9550-07-1-0573.; Vertical External Cavity Surface Emitting Lasers, VECSELs ; Conference date: 24-01-2011 Through 25-01-2011",
year = "2011",
doi = "10.1117/12.874321",
language = "English (US)",
isbn = "9780819484567",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Vertical External Cavity Surface Emitting Lasers, VECSELs",
}