High-power 1.25 μm InAs QD VECSEL based on resonant periodic gain structure

Alexander R. Albrecht, Thomas J. Rotter, Christopher P. Hains, Andreas Stintz, Guofeng Xin, Tsuei Lian Wang, Yushi Kaneda, Jerome V. Moloney, Kevin J. Malloy, Ganesh Balakrishnan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Scopus citations


We compare an InAs quantum dot (QD) vertical external-cavity surface-emitting laser (VECSEL) design consisting of 4 groups of 3 closely spaced QD layers with a resonant periodic gain (RPG) structure, where each of the 12 QD layers is placed at a separate field antinode. This increased the spacing between the QDs, reducing strain and greatly improving device performance. For thermal management, the GaAs substrate was thinned and indium bonded to CVD diamond. A fiber-coupled 808 nm diode laser was used as pump source, a 1% transmission output coupler completed the cavity. CW output powers over 4.5 W at 1250 nm were achieved.

Original languageEnglish (US)
Title of host publicationVertical External Cavity Surface Emitting Lasers, VECSELs
StatePublished - 2011
EventVertical External Cavity Surface Emitting Lasers, VECSELs - San Francisco, CA, United States
Duration: Jan 24 2011Jan 25 2011

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherVertical External Cavity Surface Emitting Lasers, VECSELs
Country/TerritoryUnited States
CitySan Francisco, CA


  • InAs quantum dot
  • Resonant periodic gain
  • SDL

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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