High peak power operation of a 1-μm GaAs-based optically pumped semiconductor laser

Alexandre Laurain, Tsuei Lian Wang, Michael J. Yarborough, Jorg Hader, Jerome V. Moloney, Stephan W. Koch, Bernardette Kunert, Wolfgang Stolz

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


We report room-temperature high-peak-power operation of an optically pumped semiconductor laser based on the InGaAs/GaAs material system. We present the design of the semiconductor structure and optimization strategies to extract the maximum pulsed peak power. The gain structure was pumped by a 775-nm Alexandrite laser with a pulsewidth adjustable from 400 ns to 1 μs and a repetition rate of 3 Hz. A new record peak power of 400 W at a wavelength of 1020 nm was obtained with a Gaussian-shaped submicrosecond pulse. An optical-to-optical efficiency of 28% is demonstrated at maximum power. The key parameters limiting the output power are discussed.

Original languageEnglish (US)
Article number2179643
Pages (from-to)380-382
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number5
StatePublished - 2012


  • High peak power
  • Optically pumped semiconductor laser
  • Pulsed laser
  • Vertical-external-cavity surface-emitting lasers (VECSELs)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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