High-gain differential CMOS transimpedance amplifier with on-chip buried double junction photodiode

W. Xu; D. L. Mathine; J. K. Barton

doi:10.1049/el:20061560

High-gain differential CMOS transimpedance amplifier with on-chip buried double junction photodiode

W. Xu, D. L. Mathine, J. K. Barton

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

An integrated fully differential CMOS transimpedance amplifier (TIA) with buried double junction photodiode input is described. The TIA features a variable high transimpedance gain (250kΩ to 2.5MΩ), large DC photocurrent rejection capability (>55dB) and low input referred noise density at 100kHz (2pA/√Hz).

Original language	English (US)
Pages (from-to)	803-805
Number of pages	3
Journal	Electronics Letters
Volume	42
Issue number	14
DOIs	https://doi.org/10.1049/el:20061560
State	Published - Jul 6 2006

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:20061560

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title = "High-gain differential CMOS transimpedance amplifier with on-chip buried double junction photodiode",

abstract = "An integrated fully differential CMOS transimpedance amplifier (TIA) with buried double junction photodiode input is described. The TIA features a variable high transimpedance gain (250kΩ to 2.5MΩ), large DC photocurrent rejection capability (>55dB) and low input referred noise density at 100kHz (2pA/√Hz).",

author = "W. Xu and Mathine, {D. L.} and Barton, {J. K.}",

year = "2006",

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AU - Xu, W.

AU - Mathine, D. L.

AU - Barton, J. K.

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Y1 - 2006/7/6

N2 - An integrated fully differential CMOS transimpedance amplifier (TIA) with buried double junction photodiode input is described. The TIA features a variable high transimpedance gain (250kΩ to 2.5MΩ), large DC photocurrent rejection capability (>55dB) and low input referred noise density at 100kHz (2pA/√Hz).

AB - An integrated fully differential CMOS transimpedance amplifier (TIA) with buried double junction photodiode input is described. The TIA features a variable high transimpedance gain (250kΩ to 2.5MΩ), large DC photocurrent rejection capability (>55dB) and low input referred noise density at 100kHz (2pA/√Hz).

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JF - Electronics Letters

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High-gain differential CMOS transimpedance amplifier with on-chip buried double junction photodiode

Abstract

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