High-Frequency Modulation Of 1.52 μm Vapour-Phase-Transported Ingaasp Lasers

J. E. Bowers; T. L. Koch; B. R. Hemenway; D. P. Wilt; T. J. Bridges; E. G. Burkhardt

doi:10.1049/el:19850279

High-Frequency Modulation Of 1.52 μm Vapour-Phase-Transported Ingaasp Lasers

J. E. Bowers
, T. L. Koch
, B. R. Hemenway
, D. P. Wilt
, T. J. Bridges
, E. G. Burkhardt

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

We describe modifications to the recently demonstrated vapour-phase-transported laser to reduce the parasitic capacitance by an order of magnitude, and increase the 3 dB bandwidth for CW 1.52 μm lasers to 8 GHz. The parasitic and nonlinear limitations to this bandwidth are discussed.

Original language	English (US)
Pages (from-to)	392-393
Number of pages	2
Journal	Electronics Letters
Volume	21
Issue number	9
DOIs	https://doi.org/10.1049/el:19850279
State	Published - 1985
Externally published	Yes

Keywords

Lasers and laser applications
Semiconductor lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19850279

Cite this

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title = "High-Frequency Modulation Of 1.52 μm Vapour-Phase-Transported Ingaasp Lasers",

abstract = "We describe modifications to the recently demonstrated vapour-phase-transported laser to reduce the parasitic capacitance by an order of magnitude, and increase the 3 dB bandwidth for CW 1.52 μm lasers to 8 GHz. The parasitic and nonlinear limitations to this bandwidth are discussed.",

keywords = "Lasers and laser applications, Semiconductor lasers",

author = "Bowers, \{J. E.\} and Koch, \{T. L.\} and Hemenway, \{B. R.\} and Wilt, \{D. P.\} and Bridges, \{T. J.\} and Burkhardt, \{E. G.\}",

year = "1985",

doi = "10.1049/el:19850279",

language = "English (US)",

volume = "21",

pages = "392--393",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons Inc.",

number = "9",

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T1 - High-Frequency Modulation Of 1.52 μm Vapour-Phase-Transported Ingaasp Lasers

AU - Bowers, J. E.

AU - Koch, T. L.

AU - Hemenway, B. R.

AU - Wilt, D. P.

AU - Bridges, T. J.

AU - Burkhardt, E. G.

PY - 1985

Y1 - 1985

N2 - We describe modifications to the recently demonstrated vapour-phase-transported laser to reduce the parasitic capacitance by an order of magnitude, and increase the 3 dB bandwidth for CW 1.52 μm lasers to 8 GHz. The parasitic and nonlinear limitations to this bandwidth are discussed.

AB - We describe modifications to the recently demonstrated vapour-phase-transported laser to reduce the parasitic capacitance by an order of magnitude, and increase the 3 dB bandwidth for CW 1.52 μm lasers to 8 GHz. The parasitic and nonlinear limitations to this bandwidth are discussed.

KW - Lasers and laser applications

KW - Semiconductor lasers

UR - https://www.scopus.com/pages/publications/0022043370

UR - https://www.scopus.com/pages/publications/0022043370#tab=citedBy

U2 - 10.1049/el:19850279

DO - 10.1049/el:19850279

M3 - Article

AN - SCOPUS:0022043370

SN - 0013-5194

VL - 21

SP - 392

EP - 393

JO - Electronics Letters

JF - Electronics Letters

IS - 9

ER -

High-Frequency Modulation Of 1.52 μm Vapour-Phase-Transported Ingaasp Lasers

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

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