High-frequency modulation of 1.52 µm vapour-phase-transported ingaasp lasers

J. E. Bowers; T. L. Koch; B. R. Hemenway; D. Wilt; T. J. Bridges; E. G. Burkhardt

doi:10.1049/el:19850213

High-frequency modulation of 1.52 µm vapour-phase-transported ingaasp lasers

J. E. Bowers, T. L. Koch, B. R. Hemenway, D. Wilt, T. J. Bridges, E. G. Burkhardt

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

We describe modifications to the recently demonstrated vapour-phase-transported laser structure to reduce the parasitic capacitance by an order of magnitude, and increase the 3 dB bandwidth for CW 1.52 µm lasers to 8 GHz. The parasitic and nonlinear limitations to this bandwidth are discussed.

Original language	English (US)
Pages (from-to)	297-299
Number of pages	3
Journal	Electronics Letters
Volume	21
Issue number	7
DOIs	https://doi.org/10.1049/el:19850213
State	Published - 1985
Externally published	Yes

Keywords

Lasers and laser applications
Modulation
Semiconductor lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1049/el:19850213

Cite this

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title = "High-frequency modulation of 1.52 µm vapour-phase-transported ingaasp lasers",

abstract = "We describe modifications to the recently demonstrated vapour-phase-transported laser structure to reduce the parasitic capacitance by an order of magnitude, and increase the 3 dB bandwidth for CW 1.52 µm lasers to 8 GHz. The parasitic and nonlinear limitations to this bandwidth are discussed.",

keywords = "Lasers and laser applications, Modulation, Semiconductor lasers",

author = "Bowers, {J. E.} and Koch, {T. L.} and Hemenway, {B. R.} and D. Wilt and Bridges, {T. J.} and Burkhardt, {E. G.}",

year = "1985",

doi = "10.1049/el:19850213",

language = "English (US)",

volume = "21",

pages = "297--299",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley & Sons Inc.",

number = "7",

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TY - JOUR

T1 - High-frequency modulation of 1.52 µm vapour-phase-transported ingaasp lasers

AU - Bowers, J. E.

AU - Koch, T. L.

AU - Hemenway, B. R.

AU - Wilt, D.

AU - Bridges, T. J.

AU - Burkhardt, E. G.

PY - 1985

Y1 - 1985

N2 - We describe modifications to the recently demonstrated vapour-phase-transported laser structure to reduce the parasitic capacitance by an order of magnitude, and increase the 3 dB bandwidth for CW 1.52 µm lasers to 8 GHz. The parasitic and nonlinear limitations to this bandwidth are discussed.

AB - We describe modifications to the recently demonstrated vapour-phase-transported laser structure to reduce the parasitic capacitance by an order of magnitude, and increase the 3 dB bandwidth for CW 1.52 µm lasers to 8 GHz. The parasitic and nonlinear limitations to this bandwidth are discussed.

KW - Lasers and laser applications

KW - Modulation

KW - Semiconductor lasers

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DO - 10.1049/el:19850213

M3 - Article

AN - SCOPUS:0022025297

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EP - 299

JO - Electronics Letters

JF - Electronics Letters

IS - 7

ER -

High-frequency modulation of 1.52 µm vapour-phase-transported ingaasp lasers

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

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