This paper describes an unique combination of dry and wet cleaning techniques for removing ion implanted photoresist following source/drain implantation step in front end of line (FEOL) integrated device manufacturing process. The dry cleaning comprises of CO2 cryogenic aerosol. The inherent non-oxidizing and non-etching characteristics of the cryogenic aerosol technique, overcomes the current problems with oxidizing plasma process for nigh dose implanted resist strip (HDIS). The paper shows resist removal data from blanket ion implanted photoresist as well as from patterned wafers without damage to the poly lines. The blanket wafer cleaning performance has been characterized using analytical techniques such as EDX, XPS and particle scans with SP1. The patterned wafer cleaning efficiency without damage to the sensitive poly lines is determined using optical microscope, SEM, and KLA patterned wafer inspection system.