Heterogeneously integrated organic light-emitting diodes with complementary metal-oxide-silicon circuitry

D. L. Mathine; H. S. Woo; W. He; T. W. Kim; B. Kippelen; N. Peyghambarian

doi:10.1063/1.126798

Heterogeneously integrated organic light-emitting diodes with complementary metal-oxide-silicon circuitry

D. L. Mathine, H. S. Woo, W. He, T. W. Kim, B. Kippelen, N. Peyghambarian

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

Top-emitting arrays of organic light-emitting diodes (OLEDs) have been fabricated and demonstrated on complementary metal-oxide-silicon (CMOS) circuitry. The 8 × 8 array of OLEDs is composed of 90 μm micropixels with a 55 μm separation. The OLEDs are based on an emitting layer of tris-(8-hydroxyquinoline)aluminum (Alq₃) doped with coumarin 6 to provide green light emission. A layer of N,N′-diphenyl-N, N′-bis(3-methylphenyl)1-1′-biphenyl 1-4, 4′-diamine (TPD) was used as a hole transport layer and poly(ethylenedioxythiophene) doped with polystyrenesulfonate was used as a buffer layer between the TPD and the CMOS anode metal. Bright light was emitted through a semitransparent Mg:Ag cathode when the micropixel was driven by an individual current source.

Original language	English (US)
Pages (from-to)	3849-3851
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	26
DOIs	https://doi.org/10.1063/1.126798
State	Published - Jun 26 2000

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Heterogeneously integrated organic light-emitting diodes with complementary metal-oxide-silicon circuitry",

abstract = "Top-emitting arrays of organic light-emitting diodes (OLEDs) have been fabricated and demonstrated on complementary metal-oxide-silicon (CMOS) circuitry. The 8 × 8 array of OLEDs is composed of 90 μm micropixels with a 55 μm separation. The OLEDs are based on an emitting layer of tris-(8-hydroxyquinoline)aluminum (Alq3) doped with coumarin 6 to provide green light emission. A layer of N,N′-diphenyl-N, N′-bis(3-methylphenyl)1-1′-biphenyl 1-4, 4′-diamine (TPD) was used as a hole transport layer and poly(ethylenedioxythiophene) doped with polystyrenesulfonate was used as a buffer layer between the TPD and the CMOS anode metal. Bright light was emitted through a semitransparent Mg:Ag cathode when the micropixel was driven by an individual current source.",

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AU - Mathine, D. L.

AU - Woo, H. S.

AU - He, W.

AU - Kim, T. W.

AU - Kippelen, B.

AU - Peyghambarian, N.

PY - 2000/6/26

Y1 - 2000/6/26

N2 - Top-emitting arrays of organic light-emitting diodes (OLEDs) have been fabricated and demonstrated on complementary metal-oxide-silicon (CMOS) circuitry. The 8 × 8 array of OLEDs is composed of 90 μm micropixels with a 55 μm separation. The OLEDs are based on an emitting layer of tris-(8-hydroxyquinoline)aluminum (Alq3) doped with coumarin 6 to provide green light emission. A layer of N,N′-diphenyl-N, N′-bis(3-methylphenyl)1-1′-biphenyl 1-4, 4′-diamine (TPD) was used as a hole transport layer and poly(ethylenedioxythiophene) doped with polystyrenesulfonate was used as a buffer layer between the TPD and the CMOS anode metal. Bright light was emitted through a semitransparent Mg:Ag cathode when the micropixel was driven by an individual current source.

AB - Top-emitting arrays of organic light-emitting diodes (OLEDs) have been fabricated and demonstrated on complementary metal-oxide-silicon (CMOS) circuitry. The 8 × 8 array of OLEDs is composed of 90 μm micropixels with a 55 μm separation. The OLEDs are based on an emitting layer of tris-(8-hydroxyquinoline)aluminum (Alq3) doped with coumarin 6 to provide green light emission. A layer of N,N′-diphenyl-N, N′-bis(3-methylphenyl)1-1′-biphenyl 1-4, 4′-diamine (TPD) was used as a hole transport layer and poly(ethylenedioxythiophene) doped with polystyrenesulfonate was used as a buffer layer between the TPD and the CMOS anode metal. Bright light was emitted through a semitransparent Mg:Ag cathode when the micropixel was driven by an individual current source.

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Heterogeneously integrated organic light-emitting diodes with complementary metal-oxide-silicon circuitry

Abstract

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