Heterogeneously integrated organic light-emitting diodes with complementary metal-oxide-silicon circuitry

D. L. Mathine, H. S. Woo, W. He, T. W. Kim, B. Kippelen, N. Peyghambarian

Research output: Contribution to journalArticlepeer-review

27 Scopus citations


Top-emitting arrays of organic light-emitting diodes (OLEDs) have been fabricated and demonstrated on complementary metal-oxide-silicon (CMOS) circuitry. The 8 × 8 array of OLEDs is composed of 90 μm micropixels with a 55 μm separation. The OLEDs are based on an emitting layer of tris-(8-hydroxyquinoline)aluminum (Alq3) doped with coumarin 6 to provide green light emission. A layer of N,N′-diphenyl-N, N′-bis(3-methylphenyl)1-1′-biphenyl 1-4, 4′-diamine (TPD) was used as a hole transport layer and poly(ethylenedioxythiophene) doped with polystyrenesulfonate was used as a buffer layer between the TPD and the CMOS anode metal. Bright light was emitted through a semitransparent Mg:Ag cathode when the micropixel was driven by an individual current source.

Original languageEnglish (US)
Pages (from-to)3849-3851
Number of pages3
JournalApplied Physics Letters
Issue number26
StatePublished - Jun 26 2000

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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