Heat dissipation for high power optically pumped semiconductor vertical external cavity surface emitting lasers

Li Fan; Marc Schillgalies; Mahmoud Fallahi; Thomas R. Nelson; James E. Ehret; Donald L. Agresta; Jerome Moloney; Jorg Hader; Aramais Zakharian; James Murray

Heat dissipation for high power optically pumped semiconductor vertical external cavity surface emitting lasers

Li Fan, Marc Schillgalies, Mahmoud Fallahi, Thomas R. Nelson, James E. Ehret, Donald L. Agresta, Jerome Moloney, Jorg Hader, Aramais Zakharian, James Murray

Research output: Contribution to journal › Conference article › peer-review

Abstract

Optically pumped semiconductor (OPS) vertical external cavity surface emitting lasers (VECSELs) have a number of advantages over conventional semiconductor diode lasers. High power CW operation of the OPS-VECSELs requires proper thermal design of the structure and efficient heat extraction from the active region. To achieve this goal the epitaxial structure should be as close as possible to the heat sink. Furthermore, mechanical strain caused by the mounting method should be avoided. This paper outlines several methods for substrate removal and sample mounting.

Original language	English (US)
Pages (from-to)	79-80
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	1
State	Published - 2003
Event	2003 IEEE LEOS Annual Meeting Conference Proceedings - TUCSON, AZ, United States Duration: Oct 26 2003 → Oct 30 2003

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "Heat dissipation for high power optically pumped semiconductor vertical external cavity surface emitting lasers",

abstract = "Optically pumped semiconductor (OPS) vertical external cavity surface emitting lasers (VECSELs) have a number of advantages over conventional semiconductor diode lasers. High power CW operation of the OPS-VECSELs requires proper thermal design of the structure and efficient heat extraction from the active region. To achieve this goal the epitaxial structure should be as close as possible to the heat sink. Furthermore, mechanical strain caused by the mounting method should be avoided. This paper outlines several methods for substrate removal and sample mounting.",

author = "Li Fan and Marc Schillgalies and Mahmoud Fallahi and Nelson, {Thomas R.} and Ehret, {James E.} and Agresta, {Donald L.} and Jerome Moloney and Jorg Hader and Aramais Zakharian and James Murray",

year = "2003",

language = "English (US)",

volume = "1",

pages = "79--80",

journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2003 IEEE LEOS Annual Meeting Conference Proceedings ; Conference date: 26-10-2003 Through 30-10-2003",

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TY - JOUR

T1 - Heat dissipation for high power optically pumped semiconductor vertical external cavity surface emitting lasers

AU - Fan, Li

AU - Schillgalies, Marc

AU - Fallahi, Mahmoud

AU - Nelson, Thomas R.

AU - Ehret, James E.

AU - Agresta, Donald L.

AU - Moloney, Jerome

AU - Hader, Jorg

AU - Zakharian, Aramais

AU - Murray, James

PY - 2003

Y1 - 2003

N2 - Optically pumped semiconductor (OPS) vertical external cavity surface emitting lasers (VECSELs) have a number of advantages over conventional semiconductor diode lasers. High power CW operation of the OPS-VECSELs requires proper thermal design of the structure and efficient heat extraction from the active region. To achieve this goal the epitaxial structure should be as close as possible to the heat sink. Furthermore, mechanical strain caused by the mounting method should be avoided. This paper outlines several methods for substrate removal and sample mounting.

AB - Optically pumped semiconductor (OPS) vertical external cavity surface emitting lasers (VECSELs) have a number of advantages over conventional semiconductor diode lasers. High power CW operation of the OPS-VECSELs requires proper thermal design of the structure and efficient heat extraction from the active region. To achieve this goal the epitaxial structure should be as close as possible to the heat sink. Furthermore, mechanical strain caused by the mounting method should be avoided. This paper outlines several methods for substrate removal and sample mounting.

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M3 - Conference article

AN - SCOPUS:0345328212

SN - 1092-8081

VL - 1

SP - 79

EP - 80

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

T2 - 2003 IEEE LEOS Annual Meeting Conference Proceedings

Y2 - 26 October 2003 through 30 October 2003

ER -

Heat dissipation for high power optically pumped semiconductor vertical external cavity surface emitting lasers

Abstract

ASJC Scopus subject areas

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