Half-occupation approach for the ab initio calculation of strained Ga(AsSb)/GaAs valence band offsets

Maria J. Weseloh, Jan Oliver Oelerich, Stephan W. Koch

Research output: Contribution to journalArticlepeer-review

Abstract

An ab initio based scheme for the determination of the valence band offset between different III-V semiconductor systems is presented on the example of GaAs and Ga(AsSb) pseudomorphically strained to GaAs for Sb concentrations up to 37.5%. Modified core-to-valence band maximum calculations are used in combination with the half-occupation technique. The valence band offsets between GaAs and Ga(AsSb) are needed for the predictive design of optically active quantum well heterostructures emitting in the near-infrared region of the electromagnetic spectrum.

Original languageEnglish (US)
Article number045207
JournalAIP Advances
Volume10
Issue number4
DOIs
StatePublished - Apr 1 2020
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint

Dive into the research topics of 'Half-occupation approach for the ab initio calculation of strained Ga(AsSb)/GaAs valence band offsets'. Together they form a unique fingerprint.

Cite this