Growth of layered semiconductors by molecular-beam epitaxy: Formation and characterization of GaSe, MoSe₂, and phthalocyanine ultrathin films on sulfur-passivated GaP(111)

Engineering & Materials Science

• Absorption spectra 17%
• Characterization (materials science) 10%
• Chemical analysis 7%
• Dyes 13%
• Layered semiconductors 100%
• Molecular beam epitaxy 73%
• Passivation 28%
• Photoelectron spectroscopy 20%
• Reflection high energy electron diffraction 24%
• Semiconductor materials 20%
• Sulfur 45%
• Thin films 11%
• Ultrathin films 76%
• X rays 10%

Chemical Compounds

• Absorption Spectrum 8%
• Chemical Passivation 23%
• Deposition Process 12%
• Dye 7%
• Energy 5%
• Molecular Beam Epitaxy 67%
• Photoelectron Spectroscopy 11%
• Phthalocyanine 47%
• Reflection High Energy Electron Diffraction 19%
• Semiconductor 36%
• Shape 7%
• Surface 15%
• Ultrathin Film 58%

Physics & Astronomy

• absorption spectra 11%
• characterization 26%
• dyes 13%
• electron diffraction 13%
• energy 4%
• high energy electrons 15%
• molecular beam epitaxy 40%
• passivity 29%
• photoelectron spectroscopy 12%
• sulfur 45%
• surface layers 13%
• thin films 8%
• x ray spectroscopy 16%