Growth and thermal conductivity analysis of polycrystalline GaAs on chemical vapor deposition diamond for use in thermal management of high-power semiconductor lasers

S. P.R. Clark; P. Ahirwar; F. T. Jaeckel; C. P. Hains; A. R. Albrecht; T. J. Rotter; L. R. Dawson; G. Balakrishnan; P. E. Hopkins; L. M. Phinney; J. Hader; J. V. Moloney

doi:10.1116/1.3565054

Growth and thermal conductivity analysis of polycrystalline GaAs on chemical vapor deposition diamond for use in thermal management of high-power semiconductor lasers

S. P.R. Clark, P. Ahirwar, F. T. Jaeckel, C. P. Hains, A. R. Albrecht, T. J. Rotter, L. R. Dawson, G. Balakrishnan, P. E. Hopkins, L. M. Phinney, J. Hader, J. V. Moloney

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The authors demonstrate the growth of polycrystalline GaAs thin films on polycrystalline chemical vapor deposition (CVD) diamond by low-temperature molecular beam epitaxy. The low-temperature GaAs (LT-GaAs) layer is easily polished compared to the CVD diamond, and this process results in a reduction of rms surface roughness from 50 to <5 nm. This makes the LT-GaAs on diamond layer an ideal wafer-bonding interface for high-power semiconductor devices. The samples were grown at 0.2 μm/h with a substrate temperature of 250°C and a 1:8 III/V beam equivalent pressure ratio. The samples were analyzed by x-ray powder diffraction, atomic force microscopy for surface roughness, and in situ reflective high-energy electron diffraction during molecular beam epitaxy growth. The authors also measure the thermal conductivity of the GaAs layer on CVD diamond using pump-probe time domain thermoreflectance.

Original language	English (US)
Article number	03C130
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	29
Issue number	3
DOIs	https://doi.org/10.1116/1.3565054
State	Published - May 2011

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1116/1.3565054

Cite this

Clark, S. P. R., Ahirwar, P., Jaeckel, F. T., Hains, C. P., Albrecht, A. R., Rotter, T. J., Dawson, L. R., Balakrishnan, G., Hopkins, P. E., Phinney, L. M., Hader, J., & Moloney, J. V. (2011). Growth and thermal conductivity analysis of polycrystalline GaAs on chemical vapor deposition diamond for use in thermal management of high-power semiconductor lasers. Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 29(3), Article 03C130. https://doi.org/10.1116/1.3565054

Growth and thermal conductivity analysis of polycrystalline GaAs on chemical vapor deposition diamond for use in thermal management of high-power semiconductor lasers. / Clark, S. P.R.; Ahirwar, P.; Jaeckel, F. T. et al.
In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 29, No. 3, 03C130, 05.2011.

Research output: Contribution to journal › Article › peer-review

Clark, SPR, Ahirwar, P, Jaeckel, FT, Hains, CP, Albrecht, AR, Rotter, TJ, Dawson, LR, Balakrishnan, G, Hopkins, PE, Phinney, LM, Hader, J & Moloney, JV 2011, 'Growth and thermal conductivity analysis of polycrystalline GaAs on chemical vapor deposition diamond for use in thermal management of high-power semiconductor lasers', Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, vol. 29, no. 3, 03C130. https://doi.org/10.1116/1.3565054

@article{b1b4a2fff6b94e29b7d28e823913f70f,

title = "Growth and thermal conductivity analysis of polycrystalline GaAs on chemical vapor deposition diamond for use in thermal management of high-power semiconductor lasers",

abstract = "The authors demonstrate the growth of polycrystalline GaAs thin films on polycrystalline chemical vapor deposition (CVD) diamond by low-temperature molecular beam epitaxy. The low-temperature GaAs (LT-GaAs) layer is easily polished compared to the CVD diamond, and this process results in a reduction of rms surface roughness from 50 to <5 nm. This makes the LT-GaAs on diamond layer an ideal wafer-bonding interface for high-power semiconductor devices. The samples were grown at 0.2 μm/h with a substrate temperature of 250°C and a 1:8 III/V beam equivalent pressure ratio. The samples were analyzed by x-ray powder diffraction, atomic force microscopy for surface roughness, and in situ reflective high-energy electron diffraction during molecular beam epitaxy growth. The authors also measure the thermal conductivity of the GaAs layer on CVD diamond using pump-probe time domain thermoreflectance.",

author = "Clark, {S. P.R.} and P. Ahirwar and Jaeckel, {F. T.} and Hains, {C. P.} and Albrecht, {A. R.} and Rotter, {T. J.} and Dawson, {L. R.} and G. Balakrishnan and Hopkins, {P. E.} and Phinney, {L. M.} and J. Hader and Moloney, {J. V.}",

note = "Funding Information: This research is done at the University of New Mexico and the University of Arizona for this publication and was funded by a U.S. Joint Technology Office Multidisciplinary Research Initiative Program, AFOSR Grant No. FA9550-07-1-0573 and Optoelectronics Research Center (at CHTM), AFOSR Grant No. FA9550-09-1-0202. P.E.H is grateful for funding from the LDRD program office through the Sandia National Laboratories Harry S. Truman Fellowship. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the United States Department of Energy{\textquoteright}s National Nuclear Security Administration under Contract No. DE-AC04-94AL85000.",

year = "2011",

month = may,

doi = "10.1116/1.3565054",

language = "English (US)",

volume = "29",

journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",

issn = "2166-2746",

publisher = "AVS Science and Technology Society",

number = "3",

}

TY - JOUR

T1 - Growth and thermal conductivity analysis of polycrystalline GaAs on chemical vapor deposition diamond for use in thermal management of high-power semiconductor lasers

AU - Clark, S. P.R.

AU - Ahirwar, P.

AU - Jaeckel, F. T.

AU - Hains, C. P.

AU - Albrecht, A. R.

AU - Rotter, T. J.

AU - Dawson, L. R.

AU - Balakrishnan, G.

AU - Hopkins, P. E.

AU - Phinney, L. M.

AU - Hader, J.

AU - Moloney, J. V.

N1 - Funding Information: This research is done at the University of New Mexico and the University of Arizona for this publication and was funded by a U.S. Joint Technology Office Multidisciplinary Research Initiative Program, AFOSR Grant No. FA9550-07-1-0573 and Optoelectronics Research Center (at CHTM), AFOSR Grant No. FA9550-09-1-0202. P.E.H is grateful for funding from the LDRD program office through the Sandia National Laboratories Harry S. Truman Fellowship. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the United States Department of Energy’s National Nuclear Security Administration under Contract No. DE-AC04-94AL85000.

PY - 2011/5

Y1 - 2011/5

N2 - The authors demonstrate the growth of polycrystalline GaAs thin films on polycrystalline chemical vapor deposition (CVD) diamond by low-temperature molecular beam epitaxy. The low-temperature GaAs (LT-GaAs) layer is easily polished compared to the CVD diamond, and this process results in a reduction of rms surface roughness from 50 to <5 nm. This makes the LT-GaAs on diamond layer an ideal wafer-bonding interface for high-power semiconductor devices. The samples were grown at 0.2 μm/h with a substrate temperature of 250°C and a 1:8 III/V beam equivalent pressure ratio. The samples were analyzed by x-ray powder diffraction, atomic force microscopy for surface roughness, and in situ reflective high-energy electron diffraction during molecular beam epitaxy growth. The authors also measure the thermal conductivity of the GaAs layer on CVD diamond using pump-probe time domain thermoreflectance.

AB - The authors demonstrate the growth of polycrystalline GaAs thin films on polycrystalline chemical vapor deposition (CVD) diamond by low-temperature molecular beam epitaxy. The low-temperature GaAs (LT-GaAs) layer is easily polished compared to the CVD diamond, and this process results in a reduction of rms surface roughness from 50 to <5 nm. This makes the LT-GaAs on diamond layer an ideal wafer-bonding interface for high-power semiconductor devices. The samples were grown at 0.2 μm/h with a substrate temperature of 250°C and a 1:8 III/V beam equivalent pressure ratio. The samples were analyzed by x-ray powder diffraction, atomic force microscopy for surface roughness, and in situ reflective high-energy electron diffraction during molecular beam epitaxy growth. The authors also measure the thermal conductivity of the GaAs layer on CVD diamond using pump-probe time domain thermoreflectance.

UR - http://www.scopus.com/inward/record.url?scp=79958169694&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79958169694&partnerID=8YFLogxK

U2 - 10.1116/1.3565054

DO - 10.1116/1.3565054

M3 - Article

AN - SCOPUS:79958169694

SN - 2166-2746

VL - 29

JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

IS - 3

M1 - 03C130

ER -

Growth and thermal conductivity analysis of polycrystalline GaAs on chemical vapor deposition diamond for use in thermal management of high-power semiconductor lasers

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this