Growth and optimization of 2-μm InGaSb/AlGaSb quantum-well-based VECSELs on GaAs/AlGaAs DBRs

Pankaj Ahirwar; Thomas J. Rotter; Darryl Shima; Nahid A. Jahan; Stephen P.R. Clark; Sadhvikas J. Addamane; Ganesh Balakrishnan; Alexandre Laurain; Jörg Hader; Yi Ying Lai; Jerome V. Moloney; Ikuo Suemune; Robert G. Bedford

doi:10.1109/JSTQE.2013.2239615

Growth and optimization of 2-μm InGaSb/AlGaSb quantum-well-based VECSELs on GaAs/AlGaAs DBRs

Pankaj Ahirwar, Thomas J. Rotter, Darryl Shima, Nahid A. Jahan, Stephen P.R. Clark, Sadhvikas J. Addamane, Ganesh Balakrishnan, Alexandre Laurain, Jörg Hader, Yi Ying Lai, Jerome V. Moloney, Ikuo Suemune, Robert G. Bedford

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We report the growth of optically pumped vertical-external-cavity surface-emitting lasers (VECSELs) based on InGaSb/AlGaSb quantum wells grown on GaAs/AlGaAs distri-buted Bragg reflectors (DBRs). The 7.78% lattice mismatch between GaSb and GaAs is accommodated by an array of 90° misfit dislocations at the interface. This results in spontaneous relaxation of the GaSb epilayer and also significantly reduces the threading dislocation density. The VECSELs are operated in both pulsed (with 340-W peak output power) and continuous wave mode (with 0.12-W peak output power). We investigate the effects of the GaSb/GaAs interface by comparing the lattice mismatched III-Sb VECSEL grown on GaAs/AlGaAs DBRs to a lattice matched III-Sb VECSEL grown on GaSb/AlAsSb DBRs. The lattice matched VECSEL outperforms the lattice mismatched VECSEL in terms of threshold pump density, efficiency, and maximum continuous-wave output power. This can be attributed to the presence of threading dislocations throughout the active region of the mismatched VECSEL, which is confirmed by cross-sectional transmission electron microscopy. The optical properties of the III-Sb active regions are characterized by time-resolved photoluminescence, which can be used to optimize the IMF interface.

Original language	English (US)
Article number	6410324
Journal	IEEE Journal on Selected Topics in Quantum Electronics
Volume	19
Issue number	4
DOIs	https://doi.org/10.1109/JSTQE.2013.2239615
State	Published - 2013

Keywords

Semiconductor lasers
quantum-well lasers
surface-emitting lasers

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/JSTQE.2013.2239615

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Ahirwar, P., Rotter, T. J., Shima, D., Jahan, N. A., Clark, S. P. R., Addamane, S. J., Balakrishnan, G., Laurain, A., Hader, J., Lai, Y. Y., Moloney, J. V., Suemune, I., & Bedford, R. G. (2013). Growth and optimization of 2-μm InGaSb/AlGaSb quantum-well-based VECSELs on GaAs/AlGaAs DBRs. IEEE Journal on Selected Topics in Quantum Electronics, 19(4), Article 6410324. https://doi.org/10.1109/JSTQE.2013.2239615

Ahirwar, P, Rotter, TJ, Shima, D, Jahan, NA, Clark, SPR, Addamane, SJ, Balakrishnan, G, Laurain, A, Hader, J, Lai, YY, Moloney, JV, Suemune, I & Bedford, RG 2013, 'Growth and optimization of 2-μm InGaSb/AlGaSb quantum-well-based VECSELs on GaAs/AlGaAs DBRs', IEEE Journal on Selected Topics in Quantum Electronics, vol. 19, no. 4, 6410324. https://doi.org/10.1109/JSTQE.2013.2239615

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title = "Growth and optimization of 2-μm InGaSb/AlGaSb quantum-well-based VECSELs on GaAs/AlGaAs DBRs",

abstract = "We report the growth of optically pumped vertical-external-cavity surface-emitting lasers (VECSELs) based on InGaSb/AlGaSb quantum wells grown on GaAs/AlGaAs distri-buted Bragg reflectors (DBRs). The 7.78% lattice mismatch between GaSb and GaAs is accommodated by an array of 90° misfit dislocations at the interface. This results in spontaneous relaxation of the GaSb epilayer and also significantly reduces the threading dislocation density. The VECSELs are operated in both pulsed (with 340-W peak output power) and continuous wave mode (with 0.12-W peak output power). We investigate the effects of the GaSb/GaAs interface by comparing the lattice mismatched III-Sb VECSEL grown on GaAs/AlGaAs DBRs to a lattice matched III-Sb VECSEL grown on GaSb/AlAsSb DBRs. The lattice matched VECSEL outperforms the lattice mismatched VECSEL in terms of threshold pump density, efficiency, and maximum continuous-wave output power. This can be attributed to the presence of threading dislocations throughout the active region of the mismatched VECSEL, which is confirmed by cross-sectional transmission electron microscopy. The optical properties of the III-Sb active regions are characterized by time-resolved photoluminescence, which can be used to optimize the IMF interface.",

keywords = "Semiconductor lasers, quantum-well lasers, surface-emitting lasers",

author = "Pankaj Ahirwar and Rotter, {Thomas J.} and Darryl Shima and Jahan, {Nahid A.} and Clark, {Stephen P.R.} and Addamane, {Sadhvikas J.} and Ganesh Balakrishnan and Alexandre Laurain and J{\"o}rg Hader and Lai, {Yi Ying} and Moloney, {Jerome V.} and Ikuo Suemune and Bedford, {Robert G.}",

year = "2013",

doi = "10.1109/JSTQE.2013.2239615",

language = "English (US)",

volume = "19",

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T1 - Growth and optimization of 2-μm InGaSb/AlGaSb quantum-well-based VECSELs on GaAs/AlGaAs DBRs

AU - Ahirwar, Pankaj

AU - Rotter, Thomas J.

AU - Shima, Darryl

AU - Jahan, Nahid A.

AU - Clark, Stephen P.R.

AU - Addamane, Sadhvikas J.

AU - Balakrishnan, Ganesh

AU - Laurain, Alexandre

AU - Hader, Jörg

AU - Lai, Yi Ying

AU - Moloney, Jerome V.

AU - Suemune, Ikuo

AU - Bedford, Robert G.

PY - 2013

Y1 - 2013

N2 - We report the growth of optically pumped vertical-external-cavity surface-emitting lasers (VECSELs) based on InGaSb/AlGaSb quantum wells grown on GaAs/AlGaAs distri-buted Bragg reflectors (DBRs). The 7.78% lattice mismatch between GaSb and GaAs is accommodated by an array of 90° misfit dislocations at the interface. This results in spontaneous relaxation of the GaSb epilayer and also significantly reduces the threading dislocation density. The VECSELs are operated in both pulsed (with 340-W peak output power) and continuous wave mode (with 0.12-W peak output power). We investigate the effects of the GaSb/GaAs interface by comparing the lattice mismatched III-Sb VECSEL grown on GaAs/AlGaAs DBRs to a lattice matched III-Sb VECSEL grown on GaSb/AlAsSb DBRs. The lattice matched VECSEL outperforms the lattice mismatched VECSEL in terms of threshold pump density, efficiency, and maximum continuous-wave output power. This can be attributed to the presence of threading dislocations throughout the active region of the mismatched VECSEL, which is confirmed by cross-sectional transmission electron microscopy. The optical properties of the III-Sb active regions are characterized by time-resolved photoluminescence, which can be used to optimize the IMF interface.

AB - We report the growth of optically pumped vertical-external-cavity surface-emitting lasers (VECSELs) based on InGaSb/AlGaSb quantum wells grown on GaAs/AlGaAs distri-buted Bragg reflectors (DBRs). The 7.78% lattice mismatch between GaSb and GaAs is accommodated by an array of 90° misfit dislocations at the interface. This results in spontaneous relaxation of the GaSb epilayer and also significantly reduces the threading dislocation density. The VECSELs are operated in both pulsed (with 340-W peak output power) and continuous wave mode (with 0.12-W peak output power). We investigate the effects of the GaSb/GaAs interface by comparing the lattice mismatched III-Sb VECSEL grown on GaAs/AlGaAs DBRs to a lattice matched III-Sb VECSEL grown on GaSb/AlAsSb DBRs. The lattice matched VECSEL outperforms the lattice mismatched VECSEL in terms of threshold pump density, efficiency, and maximum continuous-wave output power. This can be attributed to the presence of threading dislocations throughout the active region of the mismatched VECSEL, which is confirmed by cross-sectional transmission electron microscopy. The optical properties of the III-Sb active regions are characterized by time-resolved photoluminescence, which can be used to optimize the IMF interface.

KW - Semiconductor lasers

KW - quantum-well lasers

KW - surface-emitting lasers

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JO - IEEE Journal on Selected Topics in Quantum Electronics

JF - IEEE Journal on Selected Topics in Quantum Electronics

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ER -

Growth and optimization of 2-μm InGaSb/AlGaSb quantum-well-based VECSELs on GaAs/AlGaAs DBRs

Abstract

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