Growth and annealing of InAs quantum dots on pre-structured GaAs substrates

M. Helfrich, D. Z. Hu, J. Hendrickson, M. Gehl, D. Rülke, R. Gröger, D. Litvinov, S. Linden, M. Wegener, D. Gerthsen, T. Schimmel, M. Hetterich, H. Kalt, G. Khitrova, H. M. Gibbs, D. M. Schaadt

Research output: Contribution to journalArticlepeer-review

13 Scopus citations


In this study, we investigated the effect of in situ annealing on InAs quantum dots site-selectively grown on pre-structured GaAs substrates. A morphological transition is observed with original double dots merging into one single dot during annealing. This is accompanied by a reduction of quantum dots originally nucleating between defined sites. The photoluminescence intensity of annealed site-selective quantum dots is compared to annealed self-assembled dots with linewidths of single dot emission of about 170 and 81μeV, respectively. UV-ozone cleaning is used to optimize the sample cleaning prior to quantum dot growth.

Original languageEnglish (US)
Pages (from-to)187-190
Number of pages4
JournalJournal of Crystal Growth
Issue number1
StatePublished - May 15 2011


  • In situ annealing
  • Molecular beam epitaxy
  • Patterning
  • Quantum dots
  • Site-selective growth

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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