Gauge Invariant Formulation of the Semiconductor Bloch Equations

A. M. Parks; J. V. Moloney; T. Brabec

doi:10.1103/PhysRevLett.131.236902

Gauge Invariant Formulation of the Semiconductor Bloch Equations

A. M. Parks, J. V. Moloney, T. Brabec

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We derive gauge invariant semiconductor Bloch equations (GI-SBEs) that contain only gauge invariant band structure; shift vectors, and triple phase products. The validity and utility of the GI-SBEs is demonstrated in intense laser driven solids with broken inversion symmetry and nontrivial topology. The GI-SBEs present a useful platform for modeling and interpreting light-matter interactions in solids, in which the gauge freedom of the Bloch basis functions obscures physics and creates numerical obstacles.

Original language	English (US)
Article number	236902
Journal	Physical review letters
Volume	131
Issue number	23
DOIs	https://doi.org/10.1103/PhysRevLett.131.236902
State	Published - Dec 8 2023

ASJC Scopus subject areas

General Physics and Astronomy

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10.1103/PhysRevLett.131.236902

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abstract = "We derive gauge invariant semiconductor Bloch equations (GI-SBEs) that contain only gauge invariant band structure; shift vectors, and triple phase products. The validity and utility of the GI-SBEs is demonstrated in intense laser driven solids with broken inversion symmetry and nontrivial topology. The GI-SBEs present a useful platform for modeling and interpreting light-matter interactions in solids, in which the gauge freedom of the Bloch basis functions obscures physics and creates numerical obstacles.",

author = "Parks, {A. M.} and Moloney, {J. V.} and T. Brabec",

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AB - We derive gauge invariant semiconductor Bloch equations (GI-SBEs) that contain only gauge invariant band structure; shift vectors, and triple phase products. The validity and utility of the GI-SBEs is demonstrated in intense laser driven solids with broken inversion symmetry and nontrivial topology. The GI-SBEs present a useful platform for modeling and interpreting light-matter interactions in solids, in which the gauge freedom of the Bloch basis functions obscures physics and creates numerical obstacles.

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Gauge Invariant Formulation of the Semiconductor Bloch Equations

Abstract

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