Galvanic corrosion characteristics of poly silicon-tantalum nitride couple immersed in dilute HF solutions

R. Govindarajan; M. Keswani; S. Raghavan

doi:10.1016/j.mssp.2014.07.010

Galvanic corrosion characteristics of poly silicon-tantalum nitride couple immersed in dilute HF solutions

R. Govindarajan, M. Keswani, S. Raghavan

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Galvanic corrosion characteristics between poly-Si and tantalum nitride (TaN) in dilute HF solutions (0.1 to 1%) have been investigated. Variables such as poly-Si to TaN area ratio, dissolved oxygen concentration in HF solutions and doping level of poly-Si were investigated. Extent of galvanic corrosion was directly measured as well as estimated using Tafel polarization. Morphological changes on poly-Si due to galvanic corrosion were characterized using Scanning Electron Microscopy. Increase in exposed cathode (TaN) area as well as aeration results in higher corrosion of poly-Si. In de-oxygenated HF solutions (less than 4 ppm of O₂), irrespective of the area ratio, there appears to be no significant silicon loss.

Original language	English (US)
Pages (from-to)	390-396
Number of pages	7
Journal	Materials Science in Semiconductor Processing
Volume	27
Issue number	1
DOIs	https://doi.org/10.1016/j.mssp.2014.07.010
State	Published - Nov 2014

Keywords

Dopant concentration
Galvanic corrosion
HF solution
Poly-Si
Tantalum nitride

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mssp.2014.07.010

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title = "Galvanic corrosion characteristics of poly silicon-tantalum nitride couple immersed in dilute HF solutions",

abstract = "Galvanic corrosion characteristics between poly-Si and tantalum nitride (TaN) in dilute HF solutions (0.1 to 1%) have been investigated. Variables such as poly-Si to TaN area ratio, dissolved oxygen concentration in HF solutions and doping level of poly-Si were investigated. Extent of galvanic corrosion was directly measured as well as estimated using Tafel polarization. Morphological changes on poly-Si due to galvanic corrosion were characterized using Scanning Electron Microscopy. Increase in exposed cathode (TaN) area as well as aeration results in higher corrosion of poly-Si. In de-oxygenated HF solutions (less than 4 ppm of O2), irrespective of the area ratio, there appears to be no significant silicon loss.",

keywords = "Dopant concentration, Galvanic corrosion, HF solution, Poly-Si, Tantalum nitride",

author = "R. Govindarajan and M. Keswani and S. Raghavan",

note = "Funding Information: The authors acknowledge financial support from SRC/Sematech Engineering Research Center for Environmentally Benign Semiconductor Manufacturing at The University of Arizona through Contract # 425.028 . The authors would like to thank Dr. Niraj Rana and Dr. Prashant Raghu of Micron Technology Inc., for providing the test samples. ",

year = "2014",

month = nov,

doi = "10.1016/j.mssp.2014.07.010",

language = "English (US)",

volume = "27",

pages = "390--396",

journal = "Materials Science in Semiconductor Processing",

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publisher = "Elsevier Ltd",

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T1 - Galvanic corrosion characteristics of poly silicon-tantalum nitride couple immersed in dilute HF solutions

AU - Govindarajan, R.

AU - Keswani, M.

AU - Raghavan, S.

N1 - Funding Information: The authors acknowledge financial support from SRC/Sematech Engineering Research Center for Environmentally Benign Semiconductor Manufacturing at The University of Arizona through Contract # 425.028 . The authors would like to thank Dr. Niraj Rana and Dr. Prashant Raghu of Micron Technology Inc., for providing the test samples.

PY - 2014/11

Y1 - 2014/11

N2 - Galvanic corrosion characteristics between poly-Si and tantalum nitride (TaN) in dilute HF solutions (0.1 to 1%) have been investigated. Variables such as poly-Si to TaN area ratio, dissolved oxygen concentration in HF solutions and doping level of poly-Si were investigated. Extent of galvanic corrosion was directly measured as well as estimated using Tafel polarization. Morphological changes on poly-Si due to galvanic corrosion were characterized using Scanning Electron Microscopy. Increase in exposed cathode (TaN) area as well as aeration results in higher corrosion of poly-Si. In de-oxygenated HF solutions (less than 4 ppm of O2), irrespective of the area ratio, there appears to be no significant silicon loss.

AB - Galvanic corrosion characteristics between poly-Si and tantalum nitride (TaN) in dilute HF solutions (0.1 to 1%) have been investigated. Variables such as poly-Si to TaN area ratio, dissolved oxygen concentration in HF solutions and doping level of poly-Si were investigated. Extent of galvanic corrosion was directly measured as well as estimated using Tafel polarization. Morphological changes on poly-Si due to galvanic corrosion were characterized using Scanning Electron Microscopy. Increase in exposed cathode (TaN) area as well as aeration results in higher corrosion of poly-Si. In de-oxygenated HF solutions (less than 4 ppm of O2), irrespective of the area ratio, there appears to be no significant silicon loss.

KW - Dopant concentration

KW - Galvanic corrosion

KW - HF solution

KW - Poly-Si

KW - Tantalum nitride

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U2 - 10.1016/j.mssp.2014.07.010

DO - 10.1016/j.mssp.2014.07.010

M3 - Article

AN - SCOPUS:84905021826

SN - 1369-8001

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SP - 390

EP - 396

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 1

ER -

Galvanic corrosion characteristics of poly silicon-tantalum nitride couple immersed in dilute HF solutions

Abstract

Keywords

ASJC Scopus subject areas

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