TY - GEN
T1 - Gallium Phosphide Microresonator Frequency Combs
AU - Wilson, Dalziel J.
AU - Honl, Simon
AU - Schneider, Katharina
AU - Anderson, Miles
AU - Kippenberg, Tobias J.
AU - Seidler, Paul
N1 - Publisher Copyright:
© 2018 OSA.
PY - 2018/8/6
Y1 - 2018/8/6
N2 - We demonstrate the first microresonator frequency combs in GaP, a III-V semiconductor transparent above 549 nm. High Kerr nonlinearity (> 10-18 m2/W) yields a 10-mW parametric threshold and 100-nm-wide combs with THz spacing, centered at 1550 nm.
AB - We demonstrate the first microresonator frequency combs in GaP, a III-V semiconductor transparent above 549 nm. High Kerr nonlinearity (> 10-18 m2/W) yields a 10-mW parametric threshold and 100-nm-wide combs with THz spacing, centered at 1550 nm.
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M3 - Conference contribution
AN - SCOPUS:85052584421
SN - 9781943580422
T3 - 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings
BT - 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2018 Conference on Lasers and Electro-Optics, CLEO 2018
Y2 - 13 May 2018 through 18 May 2018
ER -