@inproceedings{c54b24595ddd45349e95da332bd6852e,
title = "GaInSb/InAs superlattice-based infrared lasers",
abstract = "Mid-wave infrared lasers have been fabricated employing InAs/AlSb superlattice cladding layers and multi-quantum well active regions consisting of Ga 0.75In 0.25Sb/InAs broken-gap superlattice wells and Ga 0.75In 0.25As 0.23Sb 0.77 barriers. Diodes demonstrated to date include lasers with emission wavelengths of 3.18μm at 255K, 3.40μm at 110K.",
author = "Miles, {Richard H.} and Hasenberg, {Tom C.} and Kost, {Alan R.} and L. West",
year = "1996",
language = "English (US)",
isbn = "0819420689",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
pages = "2--7",
editor = "Doehler, {Gottfried H.} and Moise, {Theodore S.}",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
note = "Quantum Well and Superlattice Physics VI ; Conference date: 29-01-1996 Through 30-01-1996",
}