GaInSb/InAs superlattice-based infrared lasers

Richard H. Miles, Tom C. Hasenberg, Alan R. Kost, L. West

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations


Mid-wave infrared lasers have been fabricated employing InAs/AlSb superlattice cladding layers and multi-quantum well active regions consisting of Ga 0.75In 0.25Sb/InAs broken-gap superlattice wells and Ga 0.75In 0.25As 0.23Sb 0.77 barriers. Diodes demonstrated to date include lasers with emission wavelengths of 3.18μm at 255K, 3.40μm at 110K.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsGottfried H. Doehler, Theodore S. Moise
Number of pages6
StatePublished - 1996
Externally publishedYes
EventQuantum Well and Superlattice Physics VI - San Jose, CA, USA
Duration: Jan 29 1996Jan 30 1996

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


ConferenceQuantum Well and Superlattice Physics VI
CitySan Jose, CA, USA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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