Abstract
Using optical pump-white light probe spectroscopy, the gain dynamics is investigated for a vertical-external-cavity surface-emitting laser chip, which is based on a type-II heterostructure. The active region of the chip consists of a GaAs/(GaIn)As/Ga(AsSb)/(GaIn)As/GaAs multiple quantum well. For this structure, a fully microscopic theory predicts a modal room temperature gain at a wavelength of 1170 nm, which is confirmed by the experimental spectra. The results show a gain buildup on the type-II chip that is delayed relative to that of a type-I chip. This slower gain dynamics is attributed to a diminished cooling rate arising from the reduced electron-hole scattering.
Original language | English (US) |
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Article number | 232107 |
Journal | Applied Physics Letters |
Volume | 109 |
Issue number | 23 |
DOIs | |
State | Published - Dec 5 2016 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)