Gain spectroscopy of a type-II VECSEL chip

C. Lammers; M. Stein; C. Berger; C. Möller; C. Fuchs; A. Ruiz Perez; A. Rahimi-Iman; J. Hader; J. V. Moloney; W. Stolz; S. W. Koch; M. Koch

doi:10.1063/1.4971333

Gain spectroscopy of a type-II VECSEL chip

C. Lammers, M. Stein, C. Berger, C. Möller, C. Fuchs, A. Ruiz Perez, A. Rahimi-Iman, J. Hader, J. V. Moloney, W. Stolz, S. W. Koch, M. Koch

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9 Scopus citations

Abstract

Using optical pump-white light probe spectroscopy, the gain dynamics is investigated for a vertical-external-cavity surface-emitting laser chip, which is based on a type-II heterostructure. The active region of the chip consists of a GaAs/(GaIn)As/Ga(AsSb)/(GaIn)As/GaAs multiple quantum well. For this structure, a fully microscopic theory predicts a modal room temperature gain at a wavelength of 1170 nm, which is confirmed by the experimental spectra. The results show a gain buildup on the type-II chip that is delayed relative to that of a type-I chip. This slower gain dynamics is attributed to a diminished cooling rate arising from the reduced electron-hole scattering.

Original language	English (US)
Article number	232107
Journal	Applied Physics Letters
Volume	109
Issue number	23
DOIs	https://doi.org/10.1063/1.4971333
State	Published - Dec 5 2016

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4971333

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@article{09d4965f0be84e6ca8c36c65d275dcc8,

title = "Gain spectroscopy of a type-II VECSEL chip",

abstract = "Using optical pump-white light probe spectroscopy, the gain dynamics is investigated for a vertical-external-cavity surface-emitting laser chip, which is based on a type-II heterostructure. The active region of the chip consists of a GaAs/(GaIn)As/Ga(AsSb)/(GaIn)As/GaAs multiple quantum well. For this structure, a fully microscopic theory predicts a modal room temperature gain at a wavelength of 1170 nm, which is confirmed by the experimental spectra. The results show a gain buildup on the type-II chip that is delayed relative to that of a type-I chip. This slower gain dynamics is attributed to a diminished cooling rate arising from the reduced electron-hole scattering.",

author = "C. Lammers and M. Stein and C. Berger and C. M{\"o}ller and C. Fuchs and {Ruiz Perez}, A. and A. Rahimi-Iman and J. Hader and Moloney, {J. V.} and W. Stolz and Koch, {S. W.} and M. Koch",

note = "Funding Information: The authors from Marburg acknowledge the financial support from the Deutsche Forschungsgemeinschaft via the Collaborative Research Center 1083 (DFG:SFB1083). The authors from Arizona are supported by the AFOSR Grant No. FA9550-14-1-0062. Publisher Copyright: {\textcopyright} 2016 Author(s).",

year = "2016",

month = dec,

day = "5",

doi = "10.1063/1.4971333",

language = "English (US)",

volume = "109",

journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - Gain spectroscopy of a type-II VECSEL chip

AU - Lammers, C.

AU - Stein, M.

AU - Berger, C.

AU - Möller, C.

AU - Fuchs, C.

AU - Ruiz Perez, A.

AU - Rahimi-Iman, A.

AU - Hader, J.

AU - Moloney, J. V.

AU - Stolz, W.

AU - Koch, S. W.

AU - Koch, M.

N1 - Funding Information: The authors from Marburg acknowledge the financial support from the Deutsche Forschungsgemeinschaft via the Collaborative Research Center 1083 (DFG:SFB1083). The authors from Arizona are supported by the AFOSR Grant No. FA9550-14-1-0062. Publisher Copyright: © 2016 Author(s).

PY - 2016/12/5

Y1 - 2016/12/5

N2 - Using optical pump-white light probe spectroscopy, the gain dynamics is investigated for a vertical-external-cavity surface-emitting laser chip, which is based on a type-II heterostructure. The active region of the chip consists of a GaAs/(GaIn)As/Ga(AsSb)/(GaIn)As/GaAs multiple quantum well. For this structure, a fully microscopic theory predicts a modal room temperature gain at a wavelength of 1170 nm, which is confirmed by the experimental spectra. The results show a gain buildup on the type-II chip that is delayed relative to that of a type-I chip. This slower gain dynamics is attributed to a diminished cooling rate arising from the reduced electron-hole scattering.

AB - Using optical pump-white light probe spectroscopy, the gain dynamics is investigated for a vertical-external-cavity surface-emitting laser chip, which is based on a type-II heterostructure. The active region of the chip consists of a GaAs/(GaIn)As/Ga(AsSb)/(GaIn)As/GaAs multiple quantum well. For this structure, a fully microscopic theory predicts a modal room temperature gain at a wavelength of 1170 nm, which is confirmed by the experimental spectra. The results show a gain buildup on the type-II chip that is delayed relative to that of a type-I chip. This slower gain dynamics is attributed to a diminished cooling rate arising from the reduced electron-hole scattering.

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DO - 10.1063/1.4971333

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JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 23

M1 - 232107

ER -

Gain spectroscopy of a type-II VECSEL chip

Abstract

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