Gain spectroscopy of a type-II VECSEL chip

C. Lammers; M. Stein; C. Berger; C. Möller; C. Fuchs; A. Ruiz Perez; A. Rahimi-Iman; J. Hader; J. V. Moloney; W. Stolz; S. W. Koch; M. Koch

doi:10.1063/1.4971333

Gain spectroscopy of a type-II VECSEL chip

C. Lammers, M. Stein, C. Berger, C. Möller, C. Fuchs, A. Ruiz Perez, A. Rahimi-Iman, J. Hader, J. V. Moloney, W. Stolz, S. W. Koch, M. Koch

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14 Scopus citations

Abstract

Using optical pump-white light probe spectroscopy, the gain dynamics is investigated for a vertical-external-cavity surface-emitting laser chip, which is based on a type-II heterostructure. The active region of the chip consists of a GaAs/(GaIn)As/Ga(AsSb)/(GaIn)As/GaAs multiple quantum well. For this structure, a fully microscopic theory predicts a modal room temperature gain at a wavelength of 1170 nm, which is confirmed by the experimental spectra. The results show a gain buildup on the type-II chip that is delayed relative to that of a type-I chip. This slower gain dynamics is attributed to a diminished cooling rate arising from the reduced electron-hole scattering.

Original language	English (US)
Article number	232107
Journal	Applied Physics Letters
Volume	109
Issue number	23
DOIs	https://doi.org/10.1063/1.4971333
State	Published - Dec 5 2016

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4971333

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title = "Gain spectroscopy of a type-II VECSEL chip",

abstract = "Using optical pump-white light probe spectroscopy, the gain dynamics is investigated for a vertical-external-cavity surface-emitting laser chip, which is based on a type-II heterostructure. The active region of the chip consists of a GaAs/(GaIn)As/Ga(AsSb)/(GaIn)As/GaAs multiple quantum well. For this structure, a fully microscopic theory predicts a modal room temperature gain at a wavelength of 1170 nm, which is confirmed by the experimental spectra. The results show a gain buildup on the type-II chip that is delayed relative to that of a type-I chip. This slower gain dynamics is attributed to a diminished cooling rate arising from the reduced electron-hole scattering.",

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T1 - Gain spectroscopy of a type-II VECSEL chip

AU - Lammers, C.

AU - Stein, M.

AU - Berger, C.

AU - Möller, C.

AU - Fuchs, C.

AU - Ruiz Perez, A.

AU - Rahimi-Iman, A.

AU - Hader, J.

AU - Moloney, J. V.

AU - Stolz, W.

AU - Koch, S. W.

AU - Koch, M.

PY - 2016/12/5

Y1 - 2016/12/5

N2 - Using optical pump-white light probe spectroscopy, the gain dynamics is investigated for a vertical-external-cavity surface-emitting laser chip, which is based on a type-II heterostructure. The active region of the chip consists of a GaAs/(GaIn)As/Ga(AsSb)/(GaIn)As/GaAs multiple quantum well. For this structure, a fully microscopic theory predicts a modal room temperature gain at a wavelength of 1170 nm, which is confirmed by the experimental spectra. The results show a gain buildup on the type-II chip that is delayed relative to that of a type-I chip. This slower gain dynamics is attributed to a diminished cooling rate arising from the reduced electron-hole scattering.

AB - Using optical pump-white light probe spectroscopy, the gain dynamics is investigated for a vertical-external-cavity surface-emitting laser chip, which is based on a type-II heterostructure. The active region of the chip consists of a GaAs/(GaIn)As/Ga(AsSb)/(GaIn)As/GaAs multiple quantum well. For this structure, a fully microscopic theory predicts a modal room temperature gain at a wavelength of 1170 nm, which is confirmed by the experimental spectra. The results show a gain buildup on the type-II chip that is delayed relative to that of a type-I chip. This slower gain dynamics is attributed to a diminished cooling rate arising from the reduced electron-hole scattering.

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Gain spectroscopy of a type-II VECSEL chip

Abstract

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