Gain spectra of (Galn)(NAs) laser diodes for the 1.3-μm-wavelength regime

M. Hofmann; A. Wagner; C. Ellmers; C. Schlichenmeier; S. Schäfer; F. Höhnsdorf; J. Koch; W. Stolz; S. W. Koch; W. W. Rühle; J. Hader; J. V. Moloney; E. P. O'Reilly; B. Borchert; A. Yu Egorov; H. Riechert

doi:10.1063/1.1371963

Gain spectra of (Galn)(NAs) laser diodes for the 1.3-μm-wavelength regime

M. Hofmann
, A. Wagner
, C. Ellmers
, C. Schlichenmeier
, S. Schäfer
, F. Höhnsdorf
, J. Koch
, W. Stolz
, S. W. Koch
, W. W. Rühle
, J. Hader
, J. V. Moloney
, E. P. O'Reilly
, B. Borchert
, A. Yu Egorov
, H. Riechert

Research output: Contribution to journal › Article › peer-review

96 Scopus citations

Abstract

Optical gain spectra of (Galn)(NAs)/GaAs quantum-well lasers operating in the 1.3-μm-emission-wavelength regime are measured and compared to those of a commercial (Galn)(AsP)/InP structure. Good agreement of the experimental results with computed spectra of a microscopic many-body theory is obtained. Due to the contributions of a second confined subband, a spectrally broad gain region is expected for (Galn)(NAs)/GaAs at elevated carrier densities.

Original language	English (US)
Pages (from-to)	3009-3011
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	20
DOIs	https://doi.org/10.1063/1.1371963
State	Published - May 14 2001

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1371963

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Hofmann, M., Wagner, A., Ellmers, C., Schlichenmeier, C., Schäfer, S., Höhnsdorf, F., Koch, J., Stolz, W., Koch, S. W., Rühle, W. W., Hader, J., Moloney, J. V., O'Reilly, E. P., Borchert, B., Egorov, A. Y., & Riechert, H. (2001). Gain spectra of (Galn)(NAs) laser diodes for the 1.3-μm-wavelength regime. Applied Physics Letters, 78(20), 3009-3011. https://doi.org/10.1063/1.1371963

Hofmann, M, Wagner, A, Ellmers, C, Schlichenmeier, C, Schäfer, S, Höhnsdorf, F, Koch, J, Stolz, W, Koch, SW, Rühle, WW, Hader, J , Moloney, JV, O'Reilly, EP, Borchert, B, Egorov, AY & Riechert, H 2001, 'Gain spectra of (Galn)(NAs) laser diodes for the 1.3-μm-wavelength regime', Applied Physics Letters, vol. 78, no. 20, pp. 3009-3011. https://doi.org/10.1063/1.1371963

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title = "Gain spectra of (Galn)(NAs) laser diodes for the 1.3-μm-wavelength regime",

abstract = "Optical gain spectra of (Galn)(NAs)/GaAs quantum-well lasers operating in the 1.3-μm-emission-wavelength regime are measured and compared to those of a commercial (Galn)(AsP)/InP structure. Good agreement of the experimental results with computed spectra of a microscopic many-body theory is obtained. Due to the contributions of a second confined subband, a spectrally broad gain region is expected for (Galn)(NAs)/GaAs at elevated carrier densities.",

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year = "2001",

month = may,

day = "14",

doi = "10.1063/1.1371963",

language = "English (US)",

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pages = "3009--3011",

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T1 - Gain spectra of (Galn)(NAs) laser diodes for the 1.3-μm-wavelength regime

AU - Hofmann, M.

AU - Wagner, A.

AU - Ellmers, C.

AU - Schlichenmeier, C.

AU - Schäfer, S.

AU - Höhnsdorf, F.

AU - Koch, J.

AU - Stolz, W.

AU - Koch, S. W.

AU - Rühle, W. W.

AU - Hader, J.

AU - Moloney, J. V.

AU - O'Reilly, E. P.

AU - Borchert, B.

AU - Egorov, A. Yu

AU - Riechert, H.

PY - 2001/5/14

Y1 - 2001/5/14

N2 - Optical gain spectra of (Galn)(NAs)/GaAs quantum-well lasers operating in the 1.3-μm-emission-wavelength regime are measured and compared to those of a commercial (Galn)(AsP)/InP structure. Good agreement of the experimental results with computed spectra of a microscopic many-body theory is obtained. Due to the contributions of a second confined subband, a spectrally broad gain region is expected for (Galn)(NAs)/GaAs at elevated carrier densities.

AB - Optical gain spectra of (Galn)(NAs)/GaAs quantum-well lasers operating in the 1.3-μm-emission-wavelength regime are measured and compared to those of a commercial (Galn)(AsP)/InP structure. Good agreement of the experimental results with computed spectra of a microscopic many-body theory is obtained. Due to the contributions of a second confined subband, a spectrally broad gain region is expected for (Galn)(NAs)/GaAs at elevated carrier densities.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

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Gain spectra of (Galn)(NAs) laser diodes for the 1.3-μm-wavelength regime

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