Gain spectra of (Galn)(NAs) laser diodes for the 1.3-μm-wavelength regime

M. Hofmann; A. Wagner; C. Ellmers; C. Schlichenmeier; S. Schäfer; F. Höhnsdorf; J. Koch; W. Stolz; S. W. Koch; W. W. Rühle; J. Hader; J. V. Moloney; E. P. O'Reilly; B. Borchert; A. Yu Egorov; H. Riechert

doi:10.1063/1.1371963

Gain spectra of (Galn)(NAs) laser diodes for the 1.3-μm-wavelength regime

M. Hofmann, A. Wagner, C. Ellmers, C. Schlichenmeier, S. Schäfer, F. Höhnsdorf, J. Koch, W. Stolz, S. W. Koch, W. W. Rühle, J. Hader, J. V. Moloney, E. P. O'Reilly, B. Borchert, A. Yu Egorov, H. Riechert

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Abstract

Optical gain spectra of (Galn)(NAs)/GaAs quantum-well lasers operating in the 1.3-μm-emission-wavelength regime are measured and compared to those of a commercial (Galn)(AsP)/InP structure. Good agreement of the experimental results with computed spectra of a microscopic many-body theory is obtained. Due to the contributions of a second confined subband, a spectrally broad gain region is expected for (Galn)(NAs)/GaAs at elevated carrier densities.

Original language	English (US)
Pages (from-to)	3009-3011
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	20
DOIs	https://doi.org/10.1063/1.1371963
State	Published - May 14 2001

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Hofmann, M., Wagner, A., Ellmers, C., Schlichenmeier, C., Schäfer, S., Höhnsdorf, F., Koch, J., Stolz, W., Koch, S. W., Rühle, W. W., Hader, J., Moloney, J. V., O'Reilly, E. P., Borchert, B., Egorov, A. Y., & Riechert, H. (2001). Gain spectra of (Galn)(NAs) laser diodes for the 1.3-μm-wavelength regime. Applied Physics Letters, 78(20), 3009-3011. https://doi.org/10.1063/1.1371963

Hofmann, M, Wagner, A, Ellmers, C, Schlichenmeier, C, Schäfer, S, Höhnsdorf, F, Koch, J, Stolz, W, Koch, SW, Rühle, WW, Hader, J , Moloney, JV, O'Reilly, EP, Borchert, B, Egorov, AY & Riechert, H 2001, 'Gain spectra of (Galn)(NAs) laser diodes for the 1.3-μm-wavelength regime', Applied Physics Letters, vol. 78, no. 20, pp. 3009-3011. https://doi.org/10.1063/1.1371963

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title = "Gain spectra of (Galn)(NAs) laser diodes for the 1.3-μm-wavelength regime",

abstract = "Optical gain spectra of (Galn)(NAs)/GaAs quantum-well lasers operating in the 1.3-μm-emission-wavelength regime are measured and compared to those of a commercial (Galn)(AsP)/InP structure. Good agreement of the experimental results with computed spectra of a microscopic many-body theory is obtained. Due to the contributions of a second confined subband, a spectrally broad gain region is expected for (Galn)(NAs)/GaAs at elevated carrier densities.",

author = "M. Hofmann and A. Wagner and C. Ellmers and C. Schlichenmeier and S. Sch{\"a}fer and F. H{\"o}hnsdorf and J. Koch and W. Stolz and Koch, {S. W.} and R{\"u}hle, {W. W.} and J. Hader and Moloney, {J. V.} and O'Reilly, {E. P.} and B. Borchert and Egorov, {A. Yu} and H. Riechert",

year = "2001",

month = may,

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doi = "10.1063/1.1371963",

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T1 - Gain spectra of (Galn)(NAs) laser diodes for the 1.3-μm-wavelength regime

AU - Hofmann, M.

AU - Wagner, A.

AU - Ellmers, C.

AU - Schlichenmeier, C.

AU - Schäfer, S.

AU - Höhnsdorf, F.

AU - Koch, J.

AU - Stolz, W.

AU - Koch, S. W.

AU - Rühle, W. W.

AU - Hader, J.

AU - Moloney, J. V.

AU - O'Reilly, E. P.

AU - Borchert, B.

AU - Egorov, A. Yu

AU - Riechert, H.

PY - 2001/5/14

Y1 - 2001/5/14

N2 - Optical gain spectra of (Galn)(NAs)/GaAs quantum-well lasers operating in the 1.3-μm-emission-wavelength regime are measured and compared to those of a commercial (Galn)(AsP)/InP structure. Good agreement of the experimental results with computed spectra of a microscopic many-body theory is obtained. Due to the contributions of a second confined subband, a spectrally broad gain region is expected for (Galn)(NAs)/GaAs at elevated carrier densities.

AB - Optical gain spectra of (Galn)(NAs)/GaAs quantum-well lasers operating in the 1.3-μm-emission-wavelength regime are measured and compared to those of a commercial (Galn)(AsP)/InP structure. Good agreement of the experimental results with computed spectra of a microscopic many-body theory is obtained. Due to the contributions of a second confined subband, a spectrally broad gain region is expected for (Galn)(NAs)/GaAs at elevated carrier densities.

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Gain spectra of (Galn)(NAs) laser diodes for the 1.3-μm-wavelength regime

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