Gain of blue and cyan InGaN laser diodes

T. Lermer; A. Gomez-Iglesias; M. Sabathil; J. Müller; S. Lutgen; U. Strauss; B. Pasenow; J. Hader; J. V. Moloney; S. W. Koch; W. Scheibenzuber; U. T. Schwarz

doi:10.1063/1.3541785

Gain of blue and cyan InGaN laser diodes

T. Lermer
, A. Gomez-Iglesias
, M. Sabathil
, J. Müller
, S. Lutgen
, U. Strauss
, B. Pasenow
, J. Hader
, J. V. Moloney
, S. W. Koch
, W. Scheibenzuber
, U. T. Schwarz

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

Experimental gain spectra of 450 and 490 nm laser diodes on c-plane GaN are analyzed by detailed comparison with the results of a fully microscopic theory. The gain calculation shows the importance of electron LO-phonon coupling. The whole spectral gain shape, not only the low energy tail, is strongly influenced by the LO-phonon contribution. The inhomogeneous broadening parameter increases by a factor of about two for the cyan laser diode in comparison with the blue laser structure. This indicates an increase in alloy and thickness fluctuations for the longer wavelength material.

Original language	English (US)
Article number	021115
Journal	Applied Physics Letters
Volume	98
Issue number	2
DOIs	https://doi.org/10.1063/1.3541785
State	Published - Jan 10 2011

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3541785

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title = "Gain of blue and cyan InGaN laser diodes",

abstract = "Experimental gain spectra of 450 and 490 nm laser diodes on c-plane GaN are analyzed by detailed comparison with the results of a fully microscopic theory. The gain calculation shows the importance of electron LO-phonon coupling. The whole spectral gain shape, not only the low energy tail, is strongly influenced by the LO-phonon contribution. The inhomogeneous broadening parameter increases by a factor of about two for the cyan laser diode in comparison with the blue laser structure. This indicates an increase in alloy and thickness fluctuations for the longer wavelength material.",

author = "T. Lermer and A. Gomez-Iglesias and M. Sabathil and J. M{\"u}ller and S. Lutgen and U. Strauss and B. Pasenow and J. Hader and Moloney, \{J. V.\} and Koch, \{S. W.\} and W. Scheibenzuber and Schwarz, \{U. T.\}",

note = "Funding Information: Part of this work was funded by the German Federal Ministry for Education and Research (BMBF) under Contract No. 13N9373. Work by J.H. and J.V.M. was supported by the (U.S.) Air Force Office of Scientific Research, Contract No. FA 9550-07-1-0573.",

year = "2011",

month = jan,

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doi = "10.1063/1.3541785",

language = "English (US)",

volume = "98",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Gain of blue and cyan InGaN laser diodes

AU - Lermer, T.

AU - Gomez-Iglesias, A.

AU - Sabathil, M.

AU - Müller, J.

AU - Lutgen, S.

AU - Strauss, U.

AU - Pasenow, B.

AU - Hader, J.

AU - Moloney, J. V.

AU - Koch, S. W.

AU - Scheibenzuber, W.

AU - Schwarz, U. T.

N1 - Funding Information: Part of this work was funded by the German Federal Ministry for Education and Research (BMBF) under Contract No. 13N9373. Work by J.H. and J.V.M. was supported by the (U.S.) Air Force Office of Scientific Research, Contract No. FA 9550-07-1-0573.

PY - 2011/1/10

Y1 - 2011/1/10

N2 - Experimental gain spectra of 450 and 490 nm laser diodes on c-plane GaN are analyzed by detailed comparison with the results of a fully microscopic theory. The gain calculation shows the importance of electron LO-phonon coupling. The whole spectral gain shape, not only the low energy tail, is strongly influenced by the LO-phonon contribution. The inhomogeneous broadening parameter increases by a factor of about two for the cyan laser diode in comparison with the blue laser structure. This indicates an increase in alloy and thickness fluctuations for the longer wavelength material.

AB - Experimental gain spectra of 450 and 490 nm laser diodes on c-plane GaN are analyzed by detailed comparison with the results of a fully microscopic theory. The gain calculation shows the importance of electron LO-phonon coupling. The whole spectral gain shape, not only the low energy tail, is strongly influenced by the LO-phonon contribution. The inhomogeneous broadening parameter increases by a factor of about two for the cyan laser diode in comparison with the blue laser structure. This indicates an increase in alloy and thickness fluctuations for the longer wavelength material.

UR - https://www.scopus.com/pages/publications/78751507480

UR - https://www.scopus.com/pages/publications/78751507480#tab=citedBy

U2 - 10.1063/1.3541785

DO - 10.1063/1.3541785

M3 - Article

AN - SCOPUS:78751507480

SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 021115

ER -

Gain of blue and cyan InGaN laser diodes

Abstract

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