Gain in 1310-nm materials: InGaNAs and InGaPAs semiconductor quantum well lasers

J. Hader; S. W. Koch; J. V. Moloney; E. P. O'Reilly

Gain in 1310-nm materials: InGaNAs and InGaPAs semiconductor quantum well lasers

J. Hader, S. W. Koch, J. V. Moloney, E. P. O'Reilly

Research output: Contribution to conference › Paper › peer-review

Abstract

A comparative study of two semiconductor quantum well laser structures is reported. The structures include a 6-nm In_v0.3Ga_0.7N_0.02As_0.98 quantum well between 30-nm GaAs barriers and Al_0.3Ga_0.7As cladding layers and an unstrained 6-nm In_0.53Ga_0.47As quantum well, between lattice-matched 30-nm In_0.9Ga_0.1P_0.78As_0.22 barriers and InP cladding layers. Band-structure is calculated with a k·p model.

Original language	English (US)
Pages	390-391
Number of pages	2
State	Published - 2000
Externally published	Yes
Event	Conference on Lasers and Electro-Optics (CLEO 2000) - San Francisco, CA, USA Duration: May 7 2000 → May 12 2000

Other

Other	Conference on Lasers and Electro-Optics (CLEO 2000)
City	San Francisco, CA, USA
Period	5/7/00 → 5/12/00

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

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title = "Gain in 1310-nm materials: InGaNAs and InGaPAs semiconductor quantum well lasers",

abstract = "A comparative study of two semiconductor quantum well laser structures is reported. The structures include a 6-nm Inv0.3Ga0.7N0.02As0.98 quantum well between 30-nm GaAs barriers and Al0.3Ga0.7As cladding layers and an unstrained 6-nm In0.53Ga0.47As quantum well, between lattice-matched 30-nm In0.9Ga0.1P0.78As0.22 barriers and InP cladding layers. Band-structure is calculated with a k·p model.",

author = "J. Hader and Koch, {S. W.} and Moloney, {J. V.} and O'Reilly, {E. P.}",

year = "2000",

language = "English (US)",

pages = "390--391",

note = "Conference on Lasers and Electro-Optics (CLEO 2000) ; Conference date: 07-05-2000 Through 12-05-2000",

}

TY - CONF

T1 - Gain in 1310-nm materials

T2 - Conference on Lasers and Electro-Optics (CLEO 2000)

AU - Hader, J.

AU - Koch, S. W.

AU - Moloney, J. V.

AU - O'Reilly, E. P.

PY - 2000

Y1 - 2000

N2 - A comparative study of two semiconductor quantum well laser structures is reported. The structures include a 6-nm Inv0.3Ga0.7N0.02As0.98 quantum well between 30-nm GaAs barriers and Al0.3Ga0.7As cladding layers and an unstrained 6-nm In0.53Ga0.47As quantum well, between lattice-matched 30-nm In0.9Ga0.1P0.78As0.22 barriers and InP cladding layers. Band-structure is calculated with a k·p model.

AB - A comparative study of two semiconductor quantum well laser structures is reported. The structures include a 6-nm Inv0.3Ga0.7N0.02As0.98 quantum well between 30-nm GaAs barriers and Al0.3Ga0.7As cladding layers and an unstrained 6-nm In0.53Ga0.47As quantum well, between lattice-matched 30-nm In0.9Ga0.1P0.78As0.22 barriers and InP cladding layers. Band-structure is calculated with a k·p model.

UR - http://www.scopus.com/inward/record.url?scp=0034547447&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034547447&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0034547447

SP - 390

EP - 391

Y2 - 7 May 2000 through 12 May 2000

ER -

Gain in 1310-nm materials: InGaNAs and InGaPAs semiconductor quantum well lasers

Abstract

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ASJC Scopus subject areas

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