Gain and photoluminescence dynamics in dilute nitride semiconductor laser materials

A. Thränhardt; C. Schlichenmaier; S. Becker; K. Hantke; J. D. Heber; W. W. Rühle; S. W. Koch; J. Hader; J. V. Moloney; W. W. Chow

doi:10.1109/cleo.2005.201896

Gain and photoluminescence dynamics in dilute nitride semiconductor laser materials

A. Thränhardt, C. Schlichenmaier, S. Becker, K. Hantke, J. D. Heber, W. W. Rühle, S. W. Koch, J. Hader, J. V. Moloney, W. W. Chow

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The gain and photoluminescence dynamics is calculated microscopically for several GaInNAs structures. Carrier scattering rates are computed microscopically and implemented into a nonequilibrium gain model.

Original language	English (US)
Title of host publication	2005 Conference on Lasers and Electro-Optics, CLEO
Publisher	Optical Society of America (OSA)
Pages	707-709
Number of pages	3
ISBN (Print)	1557527954, 9781557527950
DOIs	https://doi.org/10.1109/cleo.2005.201896
State	Published - 2005
Event	2005 Conference on Lasers and Electro-Optics, CLEO - Baltimore, MD, United States Duration: May 22 2005 → May 27 2005

Publication series

Name	2005 Conference on Lasers and Electro-Optics, CLEO
Volume	1

Other

Other	2005 Conference on Lasers and Electro-Optics, CLEO
Country/Territory	United States
City	Baltimore, MD
Period	5/22/05 → 5/27/05

ASJC Scopus subject areas

General Engineering

Access to Document

10.1109/cleo.2005.201896

Cite this

Thränhardt, A., Schlichenmaier, C., Becker, S., Hantke, K., Heber, J. D., Rühle, W. W., Koch, S. W., Hader, J., Moloney, J. V., & Chow, W. W. (2005). Gain and photoluminescence dynamics in dilute nitride semiconductor laser materials. In 2005 Conference on Lasers and Electro-Optics, CLEO (pp. 707-709). Article CTuE1 (2005 Conference on Lasers and Electro-Optics, CLEO; Vol. 1). Optical Society of America (OSA). https://doi.org/10.1109/cleo.2005.201896

Gain and photoluminescence dynamics in dilute nitride semiconductor laser materials. / Thränhardt, A.; Schlichenmaier, C.; Becker, S. et al.
2005 Conference on Lasers and Electro-Optics, CLEO. Optical Society of America (OSA), 2005. p. 707-709 CTuE1 (2005 Conference on Lasers and Electro-Optics, CLEO; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Thränhardt, A, Schlichenmaier, C, Becker, S, Hantke, K, Heber, JD, Rühle, WW, Koch, SW , Hader, J , Moloney, JV & Chow, WW 2005, Gain and photoluminescence dynamics in dilute nitride semiconductor laser materials. in 2005 Conference on Lasers and Electro-Optics, CLEO., CTuE1, 2005 Conference on Lasers and Electro-Optics, CLEO, vol. 1, Optical Society of America (OSA), pp. 707-709, 2005 Conference on Lasers and Electro-Optics, CLEO, Baltimore, MD, United States, 5/22/05. https://doi.org/10.1109/cleo.2005.201896

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title = "Gain and photoluminescence dynamics in dilute nitride semiconductor laser materials",

abstract = "The gain and photoluminescence dynamics is calculated microscopically for several GaInNAs structures. Carrier scattering rates are computed microscopically and implemented into a nonequilibrium gain model.",

author = "A. Thr{\"a}nhardt and C. Schlichenmaier and S. Becker and K. Hantke and Heber, {J. D.} and R{\"u}hle, {W. W.} and Koch, {S. W.} and J. Hader and Moloney, {J. V.} and Chow, {W. W.}",

year = "2005",

doi = "10.1109/cleo.2005.201896",

language = "English (US)",

isbn = "1557527954",

series = "2005 Conference on Lasers and Electro-Optics, CLEO",

publisher = "Optical Society of America (OSA)",

pages = "707--709",

booktitle = "2005 Conference on Lasers and Electro-Optics, CLEO",

note = "2005 Conference on Lasers and Electro-Optics, CLEO ; Conference date: 22-05-2005 Through 27-05-2005",

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TY - GEN

T1 - Gain and photoluminescence dynamics in dilute nitride semiconductor laser materials

AU - Thränhardt, A.

AU - Schlichenmaier, C.

AU - Becker, S.

AU - Hantke, K.

AU - Heber, J. D.

AU - Rühle, W. W.

AU - Koch, S. W.

AU - Hader, J.

AU - Moloney, J. V.

AU - Chow, W. W.

PY - 2005

Y1 - 2005

N2 - The gain and photoluminescence dynamics is calculated microscopically for several GaInNAs structures. Carrier scattering rates are computed microscopically and implemented into a nonequilibrium gain model.

AB - The gain and photoluminescence dynamics is calculated microscopically for several GaInNAs structures. Carrier scattering rates are computed microscopically and implemented into a nonequilibrium gain model.

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U2 - 10.1109/cleo.2005.201896

DO - 10.1109/cleo.2005.201896

M3 - Conference contribution

AN - SCOPUS:30844459672

SN - 1557527954

SN - 9781557527950

T3 - 2005 Conference on Lasers and Electro-Optics, CLEO

SP - 707

EP - 709

BT - 2005 Conference on Lasers and Electro-Optics, CLEO

PB - Optical Society of America (OSA)

T2 - 2005 Conference on Lasers and Electro-Optics, CLEO

Y2 - 22 May 2005 through 27 May 2005

ER -

Gain and photoluminescence dynamics in dilute nitride semiconductor laser materials

Abstract

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Other

ASJC Scopus subject areas

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