Gain and photoluminescence dynamics in dilute nitride semiconductor laser materials

A. Thranhardt; C. Schlichenmaier; S. Becker; K. Hantke; J. D. Heber; W. W. Rühle; S. W. Koch; J. Hader; J. V. Moloney; W. W. Chow

Gain and photoluminescence dynamics in dilute nitride semiconductor laser materials

A. Thranhardt
, C. Schlichenmaier
, S. Becker
, K. Hantke
, J. D. Heber
, W. W. Rühle
, S. W. Koch
, J. Hader
, J. V. Moloney
, W. W. Chow

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The gain and photoluminescence dynamics is calculated microscopically for several GalnNAs structures. Carrier scattering rates are computed microscopically and implemented into a nonequilibrium gain model.

Original language	English (US)
Title of host publication	Conference on Lasers and Electro-Optics, CLEO 2005
Publisher	Optical Society of America
ISBN (Print)	1557527709, 9781557527707
State	Published - 2005
Event	Conference on Lasers and Electro-Optics, CLEO 2005 - Baltimore, MD, United States Duration: May 22 2005 → May 22 2005

Publication series

Name	Optics InfoBase Conference Papers
ISSN (Electronic)	2162-2701

Other

Other	Conference on Lasers and Electro-Optics, CLEO 2005
Country/Territory	United States
City	Baltimore, MD
Period	5/22/05 → 5/22/05

ASJC Scopus subject areas

Instrumentation
Atomic and Molecular Physics, and Optics

Cite this

Thranhardt, A, Schlichenmaier, C, Becker, S, Hantke, K, Heber, JD, Rühle, WW, Koch, SW , Hader, J , Moloney, JV & Chow, WW 2005, Gain and photoluminescence dynamics in dilute nitride semiconductor laser materials. in Conference on Lasers and Electro-Optics, CLEO 2005. Optics InfoBase Conference Papers, Optical Society of America, Conference on Lasers and Electro-Optics, CLEO 2005, Baltimore, MD, United States, 5/22/05.

@inproceedings{adbde7548bb64395a4f82ab6863cfd5d,

title = "Gain and photoluminescence dynamics in dilute nitride semiconductor laser materials",

abstract = "The gain and photoluminescence dynamics is calculated microscopically for several GalnNAs structures. Carrier scattering rates are computed microscopically and implemented into a nonequilibrium gain model.",

author = "A. Thranhardt and C. Schlichenmaier and S. Becker and K. Hantke and Heber, \{J. D.\} and R{\"u}hle, \{W. W.\} and Koch, \{S. W.\} and J. Hader and Moloney, \{J. V.\} and Chow, \{W. W.\}",

year = "2005",

language = "English (US)",

isbn = "1557527709",

series = "Optics InfoBase Conference Papers",

publisher = "Optical Society of America",

booktitle = "Conference on Lasers and Electro-Optics, CLEO 2005",

note = "Conference on Lasers and Electro-Optics, CLEO 2005 ; Conference date: 22-05-2005 Through 22-05-2005",

}

TY - GEN

T1 - Gain and photoluminescence dynamics in dilute nitride semiconductor laser materials

AU - Thranhardt, A.

AU - Schlichenmaier, C.

AU - Becker, S.

AU - Hantke, K.

AU - Heber, J. D.

AU - Rühle, W. W.

AU - Koch, S. W.

AU - Hader, J.

AU - Moloney, J. V.

AU - Chow, W. W.

PY - 2005

Y1 - 2005

N2 - The gain and photoluminescence dynamics is calculated microscopically for several GalnNAs structures. Carrier scattering rates are computed microscopically and implemented into a nonequilibrium gain model.

AB - The gain and photoluminescence dynamics is calculated microscopically for several GalnNAs structures. Carrier scattering rates are computed microscopically and implemented into a nonequilibrium gain model.

UR - https://www.scopus.com/pages/publications/84899147349

UR - https://www.scopus.com/pages/publications/84899147349#tab=citedBy

M3 - Conference contribution

AN - SCOPUS:84899147349

SN - 1557527709

SN - 9781557527707

T3 - Optics InfoBase Conference Papers

BT - Conference on Lasers and Electro-Optics, CLEO 2005

PB - Optical Society of America

T2 - Conference on Lasers and Electro-Optics, CLEO 2005

Y2 - 22 May 2005 through 22 May 2005

ER -

Gain and photoluminescence dynamics in dilute nitride semiconductor laser materials

Abstract

Publication series

Other

ASJC Scopus subject areas

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