Gain and luminescence modeling for high power laser applications

J. Hader; A. R. Zakharian; J. V. Moloney; T. R. Nelson; J. E. Ehret; S. W. Koch

doi:10.1117/12.479438

Gain and luminescence modeling for high power laser applications

J. Hader, A. R. Zakharian, J. V. Moloney, T. R. Nelson, J. E. Ehret, S. W. Koch

Research output: Contribution to journal › Conference article › peer-review

Abstract

A general scheme for the determination of vital operating characteristics of semiconductor lasers from low intensity photo-luminescence spectra is outlined and demonstrated. A fully microscopic model for the optical properties is coupled to a drift-diffusion model for the mesoscopic charge and field distributions to calculate luminescence and gain spectra in barrier-doped laser material. Analyzing experiments on an optically pumped multi quantum-well structure it is shown that the electric fields arising from the charges of ionized dopants lead to strongly excitation dependent optical properties like significant differences between luminescence and gain wavelengths.

Original language	English (US)
Pages (from-to)	99-103
Number of pages	5
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4993
DOIs	https://doi.org/10.1117/12.479438
State	Published - 2003
Event	High-Power Fiber and Semiconductor Lasers - San Jose, CA, United States Duration: Jan 27 2003 → Jan 27 2003

Keywords

Gain
Photo luminescence
Semiconductor laser

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.479438

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title = "Gain and luminescence modeling for high power laser applications",

abstract = "A general scheme for the determination of vital operating characteristics of semiconductor lasers from low intensity photo-luminescence spectra is outlined and demonstrated. A fully microscopic model for the optical properties is coupled to a drift-diffusion model for the mesoscopic charge and field distributions to calculate luminescence and gain spectra in barrier-doped laser material. Analyzing experiments on an optically pumped multi quantum-well structure it is shown that the electric fields arising from the charges of ionized dopants lead to strongly excitation dependent optical properties like significant differences between luminescence and gain wavelengths.",

keywords = "Gain, Photo luminescence, Semiconductor laser",

author = "J. Hader and Zakharian, {A. R.} and Moloney, {J. V.} and Nelson, {T. R.} and Ehret, {J. E.} and Koch, {S. W.}",

year = "2003",

doi = "10.1117/12.479438",

language = "English (US)",

volume = "4993",

pages = "99--103",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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publisher = "SPIE",

note = "High-Power Fiber and Semiconductor Lasers ; Conference date: 27-01-2003 Through 27-01-2003",

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TY - JOUR

T1 - Gain and luminescence modeling for high power laser applications

AU - Hader, J.

AU - Zakharian, A. R.

AU - Moloney, J. V.

AU - Nelson, T. R.

AU - Ehret, J. E.

AU - Koch, S. W.

PY - 2003

Y1 - 2003

N2 - A general scheme for the determination of vital operating characteristics of semiconductor lasers from low intensity photo-luminescence spectra is outlined and demonstrated. A fully microscopic model for the optical properties is coupled to a drift-diffusion model for the mesoscopic charge and field distributions to calculate luminescence and gain spectra in barrier-doped laser material. Analyzing experiments on an optically pumped multi quantum-well structure it is shown that the electric fields arising from the charges of ionized dopants lead to strongly excitation dependent optical properties like significant differences between luminescence and gain wavelengths.

AB - A general scheme for the determination of vital operating characteristics of semiconductor lasers from low intensity photo-luminescence spectra is outlined and demonstrated. A fully microscopic model for the optical properties is coupled to a drift-diffusion model for the mesoscopic charge and field distributions to calculate luminescence and gain spectra in barrier-doped laser material. Analyzing experiments on an optically pumped multi quantum-well structure it is shown that the electric fields arising from the charges of ionized dopants lead to strongly excitation dependent optical properties like significant differences between luminescence and gain wavelengths.

KW - Gain

KW - Photo luminescence

KW - Semiconductor laser

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DO - 10.1117/12.479438

M3 - Conference article

AN - SCOPUS:0242721880

SN - 0277-786X

VL - 4993

SP - 99

EP - 103

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - High-Power Fiber and Semiconductor Lasers

Y2 - 27 January 2003 through 27 January 2003

ER -

Gain and luminescence modeling for high power laser applications

Abstract

Keywords

ASJC Scopus subject areas

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