Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300-1550 nm range

C. Schlichenmaier; A. Thränhardt; T. Meier; S. W. Koch; W. W. Chow; J. Hader; J. V. Moloney

doi:10.1063/1.2149371

Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300-1550 nm range

C. Schlichenmaier
, A. Thränhardt
, T. Meier
, S. W. Koch
, W. W. Chow
, J. Hader
, J. V. Moloney

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

A microscopic model is used to analyze gain and loss properties of (GaIn) (NAs) GaAs quantum wells in the 1.3-1.55 μm range, including Auger and radiative recombination. The calculations show that, as long as good material quality can be achieved, growing highly compressively strained samples is preferable due to their specific band structure properties. Optimum laser operation is possible slightly above a peak gain of 1000 cm-1.

Original language	English (US)
Article number	261109
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	26
DOIs	https://doi.org/10.1063/1.2149371
State	Published - 2005

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2149371

Cite this

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title = "Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300-1550 nm range",

abstract = "A microscopic model is used to analyze gain and loss properties of (GaIn) (NAs) GaAs quantum wells in the 1.3-1.55 μm range, including Auger and radiative recombination. The calculations show that, as long as good material quality can be achieved, growing highly compressively strained samples is preferable due to their specific band structure properties. Optimum laser operation is possible slightly above a peak gain of 1000 cm-1.",

author = "C. Schlichenmaier and A. Thr{\"a}nhardt and T. Meier and Koch, \{S. W.\} and Chow, \{W. W.\} and J. Hader and Moloney, \{J. V.\}",

note = "Funding Information: This work was supported by the Deutsche Forschungsgemeinschaft (Research Group on Metastable Compound Semiconductors and Heterostructures), by AFOSR (F49620-02-1-0380), the U.S. Department of Energy (DE-AC04-94AL8500), the NSF International US-Germany Cooperative Grant INT0128975, and the Senior Scientist Award of the Humboldt Foundation. The authors thank Eoin P. O{\textquoteright}Reilly, Bernardette Kunert, Kerstin Volz, and Christina B{\"u}ckers for helpful discussions.",

year = "2005",

doi = "10.1063/1.2149371",

language = "English (US)",

volume = "87",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300-1550 nm range

AU - Schlichenmaier, C.

AU - Thränhardt, A.

AU - Meier, T.

AU - Koch, S. W.

AU - Chow, W. W.

AU - Hader, J.

AU - Moloney, J. V.

N1 - Funding Information: This work was supported by the Deutsche Forschungsgemeinschaft (Research Group on Metastable Compound Semiconductors and Heterostructures), by AFOSR (F49620-02-1-0380), the U.S. Department of Energy (DE-AC04-94AL8500), the NSF International US-Germany Cooperative Grant INT0128975, and the Senior Scientist Award of the Humboldt Foundation. The authors thank Eoin P. O’Reilly, Bernardette Kunert, Kerstin Volz, and Christina Bückers for helpful discussions.

PY - 2005

Y1 - 2005

N2 - A microscopic model is used to analyze gain and loss properties of (GaIn) (NAs) GaAs quantum wells in the 1.3-1.55 μm range, including Auger and radiative recombination. The calculations show that, as long as good material quality can be achieved, growing highly compressively strained samples is preferable due to their specific band structure properties. Optimum laser operation is possible slightly above a peak gain of 1000 cm-1.

AB - A microscopic model is used to analyze gain and loss properties of (GaIn) (NAs) GaAs quantum wells in the 1.3-1.55 μm range, including Auger and radiative recombination. The calculations show that, as long as good material quality can be achieved, growing highly compressively strained samples is preferable due to their specific band structure properties. Optimum laser operation is possible slightly above a peak gain of 1000 cm-1.

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U2 - 10.1063/1.2149371

DO - 10.1063/1.2149371

M3 - Article

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SN - 0003-6951

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

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ER -

Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300-1550 nm range

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