@article{5aff451a31e2421cb76048bf253dc13e,
title = "Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300-1550 nm range",
abstract = "A microscopic model is used to analyze gain and loss properties of (GaIn) (NAs) GaAs quantum wells in the 1.3-1.55 μm range, including Auger and radiative recombination. The calculations show that, as long as good material quality can be achieved, growing highly compressively strained samples is preferable due to their specific band structure properties. Optimum laser operation is possible slightly above a peak gain of 1000 cm-1.",
author = "C. Schlichenmaier and A. Thr{\"a}nhardt and T. Meier and Koch, {S. W.} and Chow, {W. W.} and J. Hader and Moloney, {J. V.}",
note = "Funding Information: This work was supported by the Deutsche Forschungsgemeinschaft (Research Group on Metastable Compound Semiconductors and Heterostructures), by AFOSR (F49620-02-1-0380), the U.S. Department of Energy (DE-AC04-94AL8500), the NSF International US-Germany Cooperative Grant INT0128975, and the Senior Scientist Award of the Humboldt Foundation. The authors thank Eoin P. O{\textquoteright}Reilly, Bernardette Kunert, Kerstin Volz, and Christina B{\"u}ckers for helpful discussions.",
year = "2005",
doi = "10.1063/1.2149371",
language = "English (US)",
volume = "87",
pages = "1--3",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "26",
}