GaAs/GaSb-AlAs/AlSb optical Bragg reflectors

A. R. Kost, T. C. Hasenberg

Research output: Contribution to journalArticlepeer-review

Abstract

Semiconductor Bragg mirrors on InP substrates that use GaAs/GaSb and AlAs/AlSb superlattices for the optically reflecting layers are described. The use of superlattices circumvents difficulties with growth of the GaAsSb and AlAsSb alloys, and they are transparent for wavelengths as short as 1050 nm. The mirrors can be combined with conventional InGaAsP active layers that can also be grown on InP.

Original languageEnglish (US)
Pages (from-to)597-598
Number of pages2
JournalElectronics Letters
Volume42
Issue number10
DOIs
StatePublished - 2006
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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