GaAs/GaSb-AlAs/AlSb optical Bragg reflectors

A. R. Kost; T. C. Hasenberg

doi:10.1049/el:20060141

GaAs/GaSb-AlAs/AlSb optical Bragg reflectors

A. R. Kost, T. C. Hasenberg

Optical Sciences

Research output: Contribution to journal › Article › peer-review

Abstract

Semiconductor Bragg mirrors on InP substrates that use GaAs/GaSb and AlAs/AlSb superlattices for the optically reflecting layers are described. The use of superlattices circumvents difficulties with growth of the GaAsSb and AlAsSb alloys, and they are transparent for wavelengths as short as 1050 nm. The mirrors can be combined with conventional InGaAsP active layers that can also be grown on InP.

Original language	English (US)
Pages (from-to)	597-598
Number of pages	2
Journal	Electronics Letters
Volume	42
Issue number	10
DOIs	https://doi.org/10.1049/el:20060141
State	Published - 2006

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:20060141

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@article{25cf45667f874201b688bc886a6cea65,

title = "GaAs/GaSb-AlAs/AlSb optical Bragg reflectors",

abstract = "Semiconductor Bragg mirrors on InP substrates that use GaAs/GaSb and AlAs/AlSb superlattices for the optically reflecting layers are described. The use of superlattices circumvents difficulties with growth of the GaAsSb and AlAsSb alloys, and they are transparent for wavelengths as short as 1050 nm. The mirrors can be combined with conventional InGaAsP active layers that can also be grown on InP.",

author = "Kost, {A. R.} and Hasenberg, {T. C.}",

year = "2006",

doi = "10.1049/el:20060141",

language = "English (US)",

volume = "42",

pages = "597--598",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley & Sons Inc.",

number = "10",

}

TY - JOUR

T1 - GaAs/GaSb-AlAs/AlSb optical Bragg reflectors

AU - Kost, A. R.

AU - Hasenberg, T. C.

PY - 2006

Y1 - 2006

N2 - Semiconductor Bragg mirrors on InP substrates that use GaAs/GaSb and AlAs/AlSb superlattices for the optically reflecting layers are described. The use of superlattices circumvents difficulties with growth of the GaAsSb and AlAsSb alloys, and they are transparent for wavelengths as short as 1050 nm. The mirrors can be combined with conventional InGaAsP active layers that can also be grown on InP.

AB - Semiconductor Bragg mirrors on InP substrates that use GaAs/GaSb and AlAs/AlSb superlattices for the optically reflecting layers are described. The use of superlattices circumvents difficulties with growth of the GaAsSb and AlAsSb alloys, and they are transparent for wavelengths as short as 1050 nm. The mirrors can be combined with conventional InGaAsP active layers that can also be grown on InP.

UR - http://www.scopus.com/inward/record.url?scp=33646688218&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646688218&partnerID=8YFLogxK

U2 - 10.1049/el:20060141

DO - 10.1049/el:20060141

M3 - Article

AN - SCOPUS:33646688218

SN - 0013-5194

VL - 42

SP - 597

EP - 598

JO - Electronics Letters

JF - Electronics Letters

IS - 10

ER -

GaAs/GaSb-AlAs/AlSb optical Bragg reflectors

Abstract

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