GaAs photonic crystal slab nanocavities: Growth, fabrication, and quality factor

J. Sweet, B. C. Richards, J. D. Olitzky, J. Hendrickson, G. Khitrova, H. M. Gibbs, D. Litvinov, D. Gerthsen, D. Z. Hu, D. M. Schaadt, M. Wegener, U. Khankhoje, A. Scherer

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


In an effort to understand why short wavelength (∼1000 nm) GaAs-based photonic crystal slab nanocavities have much lower quality factors (Q) than predicted (and observed in Si), many samples were grown, fabricated into nanocavities, and studied by atomic force, transmission electron, and scanning electron microscopy as well as optical spectroscopy. The top surface of the AlGaAs sacrificial layer can be rough even when the top of the slab is smooth; growth conditions are reported that reduce the AlGaAs roughness by an order of magnitude, but this had little effect on Q. The removal of the sacrificial layer by hydrogen fluoride can leave behind a residue; potassium hydroxide completely removes the residue, resulting in higher Qs.

Original languageEnglish (US)
Pages (from-to)1-6
Number of pages6
JournalPhotonics and Nanostructures - Fundamentals and Applications
Issue number1
StatePublished - Jan 2010


  • Integrated optics devices
  • Microcavities
  • Nanostructure fabrication
  • Photonic crystals
  • Photonic integrated circuits

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Hardware and Architecture
  • Electrical and Electronic Engineering


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