Ga-doped indium oxide nanowire phase change random access memory cells

Bo Jin, Taekyung Lim, Sanghyun Ju, Marat I. Latypov, Hyoung Seop Kim, M. Meyyappan, Jeong Soo Lee

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Phase change random access memory (PCRAM) devices are usually constructed using tellurium based compounds, but efforts to seek other materials providing desirable memory characteristics have continued. We have fabricated PCRAM devices using Ga-doped In2O3 nanowires with three different Ga compositions (Ga/(In+Ga) atomic ratio: 2.1%, 11.5% and 13.0%), and investigated their phase switching properties. The nanowires (∼40 nm in diameter) can be repeatedly switched between crystalline and amorphous phases, and Ga concentration- dependent memory switching behavior in the nanowires was observed with ultra-fast set/reset rates of 80 ns/20 ns, which are faster than for other competitive phase change materials. The observations of fast set/reset rates and two distinct states with a difference in resistance of two to three orders of magnitude appear promising for nonvolatile information storage. Moreover, we found that increasing the Ga concentration can reduce the power consumption and resistance drift; however, too high a level of Ga doping may cause difficulty in achieving the phase transition.

Original languageEnglish (US)
Article number055205
JournalNanotechnology
Volume25
Issue number5
DOIs
StatePublished - Feb 7 2014
Externally publishedYes

Keywords

  • amorphous
  • crystalline
  • Ga-doped InO nanowire
  • phase change random access memory

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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