Abstract
The modal properties of a novel vertical-external-cavity surface-emitting laser with (GaIn)As/Ga(AsSb)/(GaIn)As type-II quantum wells are analysed. The device, emitting at a wavelength around 1175 nm, is operated in TEM00 mode and optimised for a high beam quality. The M2 factors are measured at various pump powers. An excellent beam quality is observed for up to 350 mW with an M2 < 1.2.
Original language | English (US) |
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Pages (from-to) | 93-94 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 53 |
Issue number | 2 |
DOIs | |
State | Published - Jan 19 2017 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering