Abstract
Apart from its hydrothermal Ceria Degussa has now developed a novel fumed Ceria which can be used in STI and ILD CMP. By controlling process parameters of the gas-phase synthesis the nature of the material can be adjusted. Parameters, such as precursor concentration, temperature, cooling rate or residence time in the reactor directly influence material properties, e.g. the BET surface area, the particle size and the particle morphology. When used as an abrasive the properties of the particles have significant effects on the removal rate or the coefficient of friction in CMP. Thus, by carefully choosing the most suitable process parameters during the particle genesis a material with a high removal rate or high selectivity in CMP applications can be generated. Degussa has produced different types of Ceria with different BET surface area or different morphology and tested them in silica and silicon nitride polishing. Ideal polishing conditions are determined as a function of the BET surface area and pH value.
| Original language | English (US) |
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| Pages | 366-373 |
| Number of pages | 8 |
| State | Published - 2005 |
| Event | 10th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2005 - Fremont, CA, United States Duration: Feb 23 2005 → Feb 25 2005 |
Other
| Other | 10th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2005 |
|---|---|
| Country/Territory | United States |
| City | Fremont, CA |
| Period | 2/23/05 → 2/25/05 |
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering