Fully Coupled Electromigration Modeling Using Peridynamics

Y. Zhang; S. V.K. Anicode; E. Madenci; X. Fan

doi:10.1109/ECTC51909.2023.00119

Fully Coupled Electromigration Modeling Using Peridynamics

Y. Zhang, S. V.K. Anicode, E. Madenci, X. Fan

Aerospace and Mechanical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

With the development of microelectronics, modeling and understanding of electromigration became unavoidable for ensuring their reliability. This study presents a fully coupled peridynamic (PD) model to simulate electromigration and void formation. The PD form of the mass conservation equation of the atom includes the coupling terms arising from diffusion strain due to electromigration, thermal strain, and mechanical strain. The numerical results concern the simulation of electromigration in a fully constrained metal line and void nucleation and growth in a stress-free (unconstrained) metal line. This approach accurately captures the previous results and experimental measurements.

Original language	English (US)
Title of host publication	Proceedings - IEEE 73rd Electronic Components and Technology Conference, ECTC 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	682-688
Number of pages	7
ISBN (Electronic)	9798350334982
DOIs	https://doi.org/10.1109/ECTC51909.2023.00119
State	Published - 2023
Event	73rd IEEE Electronic Components and Technology Conference, ECTC 2023 - Orlando, United States Duration: May 30 2023 → Jun 2 2023

Publication series

Name	Proceedings - Electronic Components and Technology Conference
Volume	2023-May
ISSN (Print)	0569-5503

Conference

Conference	73rd IEEE Electronic Components and Technology Conference, ECTC 2023
Country/Territory	United States
City	Orlando
Period	5/30/23 → 6/2/23

Keywords

coupled
electromigration
peridynamics
void formation
void growth

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/ECTC51909.2023.00119

Cite this

Zhang, Y., Anicode, S. V. K., Madenci, E., & Fan, X. (2023). Fully Coupled Electromigration Modeling Using Peridynamics. In Proceedings - IEEE 73rd Electronic Components and Technology Conference, ECTC 2023 (pp. 682-688). (Proceedings - Electronic Components and Technology Conference; Vol. 2023-May). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECTC51909.2023.00119

Fully Coupled Electromigration Modeling Using Peridynamics. / Zhang, Y.; Anicode, S. V.K.; Madenci, E. et al.
Proceedings - IEEE 73rd Electronic Components and Technology Conference, ECTC 2023. Institute of Electrical and Electronics Engineers Inc., 2023. p. 682-688 (Proceedings - Electronic Components and Technology Conference; Vol. 2023-May).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zhang, Y, Anicode, SVK, Madenci, E & Fan, X 2023, Fully Coupled Electromigration Modeling Using Peridynamics. in Proceedings - IEEE 73rd Electronic Components and Technology Conference, ECTC 2023. Proceedings - Electronic Components and Technology Conference, vol. 2023-May, Institute of Electrical and Electronics Engineers Inc., pp. 682-688, 73rd IEEE Electronic Components and Technology Conference, ECTC 2023, Orlando, United States, 5/30/23. https://doi.org/10.1109/ECTC51909.2023.00119

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title = "Fully Coupled Electromigration Modeling Using Peridynamics",

abstract = "With the development of microelectronics, modeling and understanding of electromigration became unavoidable for ensuring their reliability. This study presents a fully coupled peridynamic (PD) model to simulate electromigration and void formation. The PD form of the mass conservation equation of the atom includes the coupling terms arising from diffusion strain due to electromigration, thermal strain, and mechanical strain. The numerical results concern the simulation of electromigration in a fully constrained metal line and void nucleation and growth in a stress-free (unconstrained) metal line. This approach accurately captures the previous results and experimental measurements.",

keywords = "coupled, electromigration, peridynamics, void formation, void growth",

author = "Y. Zhang and Anicode, {S. V.K.} and E. Madenci and X. Fan",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 73rd IEEE Electronic Components and Technology Conference, ECTC 2023 ; Conference date: 30-05-2023 Through 02-06-2023",

year = "2023",

doi = "10.1109/ECTC51909.2023.00119",

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Y1 - 2023

N2 - With the development of microelectronics, modeling and understanding of electromigration became unavoidable for ensuring their reliability. This study presents a fully coupled peridynamic (PD) model to simulate electromigration and void formation. The PD form of the mass conservation equation of the atom includes the coupling terms arising from diffusion strain due to electromigration, thermal strain, and mechanical strain. The numerical results concern the simulation of electromigration in a fully constrained metal line and void nucleation and growth in a stress-free (unconstrained) metal line. This approach accurately captures the previous results and experimental measurements.

AB - With the development of microelectronics, modeling and understanding of electromigration became unavoidable for ensuring their reliability. This study presents a fully coupled peridynamic (PD) model to simulate electromigration and void formation. The PD form of the mass conservation equation of the atom includes the coupling terms arising from diffusion strain due to electromigration, thermal strain, and mechanical strain. The numerical results concern the simulation of electromigration in a fully constrained metal line and void nucleation and growth in a stress-free (unconstrained) metal line. This approach accurately captures the previous results and experimental measurements.

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Fully Coupled Electromigration Modeling Using Peridynamics

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

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