Fully Coupled Electromigration Modeling Using Peridynamics

Y. Zhang, S. V.K. Anicode, E. Madenci, X. Fan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


With the development of microelectronics, modeling and understanding of electromigration became unavoidable for ensuring their reliability. This study presents a fully coupled peridynamic (PD) model to simulate electromigration and void formation. The PD form of the mass conservation equation of the atom includes the coupling terms arising from diffusion strain due to electromigration, thermal strain, and mechanical strain. The numerical results concern the simulation of electromigration in a fully constrained metal line and void nucleation and growth in a stress-free (unconstrained) metal line. This approach accurately captures the previous results and experimental measurements.

Original languageEnglish (US)
Title of host publicationProceedings - IEEE 73rd Electronic Components and Technology Conference, ECTC 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages7
ISBN (Electronic)9798350334982
StatePublished - 2023
Event73rd IEEE Electronic Components and Technology Conference, ECTC 2023 - Orlando, United States
Duration: May 30 2023Jun 2 2023

Publication series

NameProceedings - Electronic Components and Technology Conference
ISSN (Print)0569-5503


Conference73rd IEEE Electronic Components and Technology Conference, ECTC 2023
Country/TerritoryUnited States


  • coupled
  • electromigration
  • peridynamics
  • void formation
  • void growth

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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