Formation of sharply peaked sidelobesin large aperture single-passsemiconductor laser amplifiers

J. K. White; J. G. Mclnerney; J. V. Moloney

doi:10.1049/el:19950026

Formation of sharply peaked sidelobesin large aperture single-passsemiconductor laser amplifiers

J. K. White, J. G. Mclnerney, J. V. Moloney

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Single-pass semiconductor laser amplifiers are shown theoretically to exhibits harply peak edlobes (batears') at the edges of the ne ar-fic ldoutput. We discu ss the mechanism for the information and show that it is qualita tively different from spontaneous filamentation in homogeneous media.

Original language	English (US)
Pages (from-to)	38-39
Number of pages	2
Journal	Electronics Letters
Volume	31
Issue number	1
DOIs	https://doi.org/10.1049/el:19950026
State	Published - Jan 5 1995

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19950026

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@article{b1dea0b6d01f4e6da3ea6e4a2d296b72,

title = "Formation of sharply peaked sidelobesin large aperture single-passsemiconductor laser amplifiers",

abstract = "Single-pass semiconductor laser amplifiers are shown theoretically to exhibits harply peak edlobes (batears') at the edges of the ne ar-fic ldoutput. We discu ss the mechanism for the information and show that it is qualita tively different from spontaneous filamentation in homogeneous media.",

author = "White, {J. K.} and Mclnerney, {J. G.} and Moloney, {J. V.}",

year = "1995",

month = jan,

day = "5",

doi = "10.1049/el:19950026",

language = "English (US)",

volume = "31",

pages = "38--39",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "1",

}

TY - JOUR

T1 - Formation of sharply peaked sidelobesin large aperture single-passsemiconductor laser amplifiers

AU - White, J. K.

AU - Mclnerney, J. G.

AU - Moloney, J. V.

PY - 1995/1/5

Y1 - 1995/1/5

N2 - Single-pass semiconductor laser amplifiers are shown theoretically to exhibits harply peak edlobes (batears') at the edges of the ne ar-fic ldoutput. We discu ss the mechanism for the information and show that it is qualita tively different from spontaneous filamentation in homogeneous media.

AB - Single-pass semiconductor laser amplifiers are shown theoretically to exhibits harply peak edlobes (batears') at the edges of the ne ar-fic ldoutput. We discu ss the mechanism for the information and show that it is qualita tively different from spontaneous filamentation in homogeneous media.

UR - http://www.scopus.com/inward/record.url?scp=0029636123&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029636123&partnerID=8YFLogxK

U2 - 10.1049/el:19950026

DO - 10.1049/el:19950026

M3 - Article

AN - SCOPUS:0029636123

VL - 31

SP - 38

EP - 39

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 1

ER -

Formation of sharply peaked sidelobesin large aperture single-passsemiconductor laser amplifiers

Abstract

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