Abstract
Single-pass semiconductor laser amplifiers are shown theoretically to exhibits harply peak edlobes (batears') at the edges of the ne ar-fic ldoutput. We discu ss the mechanism for the information and show that it is qualita tively different from spontaneous filamentation in homogeneous media.
Original language | English (US) |
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Pages (from-to) | 38-39 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 31 |
Issue number | 1 |
DOIs | |
State | Published - Jan 5 1995 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering