Flash heating in chemical-mechanical polishing

L. Borucki, Z. Li, Y. Sampurno, J. Sorooshian, Y. Zhuang, A. Philipossian

Research output: Contribution to conferencePaperpeer-review

2 Scopus citations

Abstract

The chemical reaction temperature in the chemical step of chemical-mechanical polishing can be modeled by a simple compact model in which the temperature rise above ambient has the form of a power law in the sliding speed. Analytical modeling of heating of the wafer by pad asperities suggests that the local wafer temperature rise above ambient is approximately the sum of a pad leading edge temperature increment plus a flash heating increment. One of the factors in the flash temperature rise is the fraction of frictional heat transferred to the pad. Finite element heat transfer analysis of lubricated sliding contact of an asperity against a workpiece indicates that the heat transfer factor can be approximated very well by a power law in the velocity, explaining why the simple compact model works. Furthermore, the detailed thermal analysis makes it possible to relate reaction temperature parameters to basic pad, slurry and lubrication layer physical properties. Applications are shown for copper polishing.

Original languageEnglish (US)
Pages168-175
Number of pages8
StatePublished - 2005
Event10th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2005 - Fremont, CA, United States
Duration: Feb 23 2005Feb 25 2005

Other

Other10th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2005
Country/TerritoryUnited States
CityFremont, CA
Period2/23/052/25/05

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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