Abstract
Nanometer-sized features as small as 400Åhave been fabricated in single-quantum-well GaAs/A1GaAs heterostructures for studies of quantum confinement effects in quantum dots. The features have been fabricated by dry-etching techniques using nanometer-sized etch masks by a novel surface deposition of colloidally-suspended spherical particles. SEM was used to examine the feature size.
Original language | English (US) |
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Pages (from-to) | 142-148 |
Number of pages | 7 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 1284 |
DOIs | |
State | Published - Oct 1 1990 |
Event | Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors 1990 - San Diego, United States Duration: Mar 17 1990 → Mar 21 1990 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering