Fabrication of gaas nanometer scale structures by dry etching

T. Iwabuchi; C. Chuang; G. Khitrova; M. E. Warren; A. Chavez-Pirson; H. M. Gibbs; D. Sand; M. Gallagher

doi:10.1117/12.20783

Fabrication of gaas nanometer scale structures by dry etching

T. Iwabuchi, C. Chuang, G. Khitrova, M. E. Warren, A. Chavez-Pirson, H. M. Gibbs, D. Sand, M. Gallagher

Optical Sciences

Research output: Contribution to journal › Conference article › peer-review

5 Scopus citations

Abstract

Nanometer-sized features as small as 400Åhave been fabricated in single-quantum-well GaAs/A1GaAs heterostructures for studies of quantum confinement effects in quantum dots. The features have been fabricated by dry-etching techniques using nanometer-sized etch masks by a novel surface deposition of colloidally-suspended spherical particles. SEM was used to examine the feature size.

Original language	English (US)
Pages (from-to)	142-148
Number of pages	7
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1284
DOIs	https://doi.org/10.1117/12.20783
State	Published - Oct 1 1990
Event	Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors 1990 - San Diego, United States Duration: Mar 17 1990 → Mar 21 1990

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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title = "Fabrication of gaas nanometer scale structures by dry etching",

abstract = "Nanometer-sized features as small as 400{\AA}have been fabricated in single-quantum-well GaAs/A1GaAs heterostructures for studies of quantum confinement effects in quantum dots. The features have been fabricated by dry-etching techniques using nanometer-sized etch masks by a novel surface deposition of colloidally-suspended spherical particles. SEM was used to examine the feature size.",

author = "T. Iwabuchi and C. Chuang and G. Khitrova and Warren, {M. E.} and A. Chavez-Pirson and Gibbs, {H. M.} and D. Sand and M. Gallagher",

note = "Publisher Copyright: {\textcopyright} 1990 SPIE. All rights reserved.; Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors 1990 ; Conference date: 17-03-1990 Through 21-03-1990",

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doi = "10.1117/12.20783",

language = "English (US)",

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TY - JOUR

T1 - Fabrication of gaas nanometer scale structures by dry etching

AU - Iwabuchi, T.

AU - Chuang, C.

AU - Khitrova, G.

AU - Warren, M. E.

AU - Chavez-Pirson, A.

AU - Gibbs, H. M.

AU - Sand, D.

AU - Gallagher, M.

PY - 1990/10/1

Y1 - 1990/10/1

N2 - Nanometer-sized features as small as 400Åhave been fabricated in single-quantum-well GaAs/A1GaAs heterostructures for studies of quantum confinement effects in quantum dots. The features have been fabricated by dry-etching techniques using nanometer-sized etch masks by a novel surface deposition of colloidally-suspended spherical particles. SEM was used to examine the feature size.

AB - Nanometer-sized features as small as 400Åhave been fabricated in single-quantum-well GaAs/A1GaAs heterostructures for studies of quantum confinement effects in quantum dots. The features have been fabricated by dry-etching techniques using nanometer-sized etch masks by a novel surface deposition of colloidally-suspended spherical particles. SEM was used to examine the feature size.

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DO - 10.1117/12.20783

M3 - Conference article

AN - SCOPUS:0025561479

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VL - 1284

SP - 142

EP - 148

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors 1990

Y2 - 17 March 1990 through 21 March 1990

ER -

Fabrication of gaas nanometer scale structures by dry etching

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