Abstract
Presented in this paper is a separate and non-interfering photoresist-molded, metal-electroplating technology for the low-temperature fabrication and packaging of inertia electrical micro-switch. The low temperature process of the electroplating technology allows eventual modular integration and wafer-level packaging of the micro-switches on active substrates containing pre-fabricated electronic signal-processing circuits. The height of the inertia micro-switch and that of its cavity are independently controlled. Metal leads are provided for electrical access to the sealed cavities. The switches are designed using a simple but accurate lumped spring-mass model. Un-encapsulated switches making over 100 million contacts are demonstrated in room ambient. Both the strength and the hermeticity of the sealed cavity are tested and reported.
Original language | English (US) |
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Pages (from-to) | 1239-1244 |
Number of pages | 6 |
Journal | Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors |
Volume | 26 |
Issue number | 6 |
State | Published - Jun 2005 |
Externally published | Yes |
Keywords
- Electroplating
- Eutectic solder-bonding
- Hermeticity
- Inertia micro-switch
- Packaging
- Threshold acceleration
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry