Fabrication and design issues of bulk photoconductive switches used for ultra-wideband, high-power microwave generation

W. R. Buchwald; A. Balekdjian; J. Conrad; J. W. Burger; J. S.H. Schoenberg; J. S. Tyo; M. D. Abdalla; S. M. Ahern; M. C. Skipper

Fabrication and design issues of bulk photoconductive switches used for ultra-wideband, high-power microwave generation

W. R. Buchwald, A. Balekdjian, J. Conrad, J. W. Burger, J. S.H. Schoenberg, J. S. Tyo, M. D. Abdalla, S. M. Ahern, M. C. Skipper

Optical Sciences, College of

Research output: Contribution to conference › Paper › peer-review

6 Scopus citations

Abstract

The Army Research Laboratory (ARL), in collaboration with the Air Force Phillips Laboratory, has been developing the fabrication process for lateral topology, high-power photoconductive semiconductor switches (PCSS) used in phased-array, ultra-wideband (UWB) sources. This work presents issues associated with the development of these switches. First-generation devices (1.0 cm gap spacing) have been shown to achieve sub-nanosecond risetimes, working hold-off voltages of 50 kV, switched currents of 333A into a 75 Ω load, and lifetimes in excess of 2×10⁶ shots at 10 Hz. Later generation devices (0.25 gap spacing) operate at 20 kV and 1 kHz, with improved risetimes, jitter characteristics, and trigger requirements.

Original language	English (US)
Pages	970-974
Number of pages	5
State	Published - 1997
Event	Proceedings of the 1997 11th International Pulsed Power Conference. Part 2 (of 2) - Baltimore, MD, USA Duration: Jun 29 1997 → Jul 2 1997

Other

Other	Proceedings of the 1997 11th International Pulsed Power Conference. Part 2 (of 2)
City	Baltimore, MD, USA
Period	6/29/97 → 7/2/97

ASJC Scopus subject areas

Energy Engineering and Power Technology
Electrical and Electronic Engineering

Cite this

Buchwald, W. R., Balekdjian, A., Conrad, J., Burger, J. W., Schoenberg, J. S. H., Tyo, J. S., Abdalla, M. D., Ahern, S. M., & Skipper, M. C. (1997). Fabrication and design issues of bulk photoconductive switches used for ultra-wideband, high-power microwave generation. 970-974. Paper presented at Proceedings of the 1997 11th International Pulsed Power Conference. Part 2 (of 2), Baltimore, MD, USA.

Fabrication and design issues of bulk photoconductive switches used for ultra-wideband, high-power microwave generation. / Buchwald, W. R.; Balekdjian, A.; Conrad, J. et al.
1997. 970-974 Paper presented at Proceedings of the 1997 11th International Pulsed Power Conference. Part 2 (of 2), Baltimore, MD, USA.

Research output: Contribution to conference › Paper › peer-review

Buchwald, WR, Balekdjian, A, Conrad, J, Burger, JW, Schoenberg, JSH, Tyo, JS, Abdalla, MD, Ahern, SM & Skipper, MC 1997, 'Fabrication and design issues of bulk photoconductive switches used for ultra-wideband, high-power microwave generation', Paper presented at Proceedings of the 1997 11th International Pulsed Power Conference. Part 2 (of 2), Baltimore, MD, USA, 6/29/97 - 7/2/97 pp. 970-974.

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abstract = "The Army Research Laboratory (ARL), in collaboration with the Air Force Phillips Laboratory, has been developing the fabrication process for lateral topology, high-power photoconductive semiconductor switches (PCSS) used in phased-array, ultra-wideband (UWB) sources. This work presents issues associated with the development of these switches. First-generation devices (1.0 cm gap spacing) have been shown to achieve sub-nanosecond risetimes, working hold-off voltages of 50 kV, switched currents of 333A into a 75 Ω load, and lifetimes in excess of 2×106 shots at 10 Hz. Later generation devices (0.25 gap spacing) operate at 20 kV and 1 kHz, with improved risetimes, jitter characteristics, and trigger requirements.",

author = "Buchwald, {W. R.} and A. Balekdjian and J. Conrad and Burger, {J. W.} and Schoenberg, {J. S.H.} and Tyo, {J. S.} and Abdalla, {M. D.} and Ahern, {S. M.} and Skipper, {M. C.}",

year = "1997",

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note = "Proceedings of the 1997 11th International Pulsed Power Conference. Part 2 (of 2) ; Conference date: 29-06-1997 Through 02-07-1997",

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T1 - Fabrication and design issues of bulk photoconductive switches used for ultra-wideband, high-power microwave generation

AU - Buchwald, W. R.

AU - Balekdjian, A.

AU - Conrad, J.

AU - Burger, J. W.

AU - Schoenberg, J. S.H.

AU - Tyo, J. S.

AU - Abdalla, M. D.

AU - Ahern, S. M.

AU - Skipper, M. C.

PY - 1997

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N2 - The Army Research Laboratory (ARL), in collaboration with the Air Force Phillips Laboratory, has been developing the fabrication process for lateral topology, high-power photoconductive semiconductor switches (PCSS) used in phased-array, ultra-wideband (UWB) sources. This work presents issues associated with the development of these switches. First-generation devices (1.0 cm gap spacing) have been shown to achieve sub-nanosecond risetimes, working hold-off voltages of 50 kV, switched currents of 333A into a 75 Ω load, and lifetimes in excess of 2×106 shots at 10 Hz. Later generation devices (0.25 gap spacing) operate at 20 kV and 1 kHz, with improved risetimes, jitter characteristics, and trigger requirements.

AB - The Army Research Laboratory (ARL), in collaboration with the Air Force Phillips Laboratory, has been developing the fabrication process for lateral topology, high-power photoconductive semiconductor switches (PCSS) used in phased-array, ultra-wideband (UWB) sources. This work presents issues associated with the development of these switches. First-generation devices (1.0 cm gap spacing) have been shown to achieve sub-nanosecond risetimes, working hold-off voltages of 50 kV, switched currents of 333A into a 75 Ω load, and lifetimes in excess of 2×106 shots at 10 Hz. Later generation devices (0.25 gap spacing) operate at 20 kV and 1 kHz, with improved risetimes, jitter characteristics, and trigger requirements.

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ER -

Fabrication and design issues of bulk photoconductive switches used for ultra-wideband, high-power microwave generation

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