TY - JOUR
T1 - Fabrication and characterization of niobium diffusion-cooled hot-electron bolometers on silicon nitride membranes
AU - Datesman, Aaron M.
AU - Schultz, Jonathan C.
AU - Lichtenberger, Arthur W.
AU - Golish, Dathon
AU - Walker, Christopher K.
AU - Kooi, Jacob
N1 - Funding Information:
Manuscript received October 3, 2004. This work was supported by the National Science Foundation under Grant AST-0242525 and Grant AST-0138318, and by NASA under Grant NAG5-9100. A. M. Datesman, J. C. Schultz, and A. W. Lichtenberger are with the University of Virginia Department of Electrical and Computer Engineering, Charlottesville, VA (e-mail: [email protected]). D. Golish and C. K. Walker are with the University of Arizona Steward Observatory, Tucson, AZ. J. Kooi is with the California Institute of Technology, Pasadena, CA. Digital Object Identifier 10.1109/TASC.2005.850124 Fig. 1. Electric field shade plot detailing the operation of one pixel in the array of mixers. The HEB sits at the throat of the semicircular waveguide probe; the IF signal travels out through the 3 m line tapping into the probe.
PY - 2005/6
Y1 - 2005/6
N2 - We have successfully fabricated niobium diffusion-cooled hot-electron bolometer (HEB) mixers on membranes of silicon nitride less than one micron thick. This advance has allowed us to construct a 1 × 5 HEB receiver array intended for operation at 1.45 THz. This article provides an overview of the integration of the HEB array chip with silicon micromachined backshorts and feedhorns, discusses materials issues surrounding the device fabrication, reports resistance and I-V measurements, and compares HEBs fabricated on silicon nitride to similar devices on quartz substrates.
AB - We have successfully fabricated niobium diffusion-cooled hot-electron bolometer (HEB) mixers on membranes of silicon nitride less than one micron thick. This advance has allowed us to construct a 1 × 5 HEB receiver array intended for operation at 1.45 THz. This article provides an overview of the integration of the HEB array chip with silicon micromachined backshorts and feedhorns, discusses materials issues surrounding the device fabrication, reports resistance and I-V measurements, and compares HEBs fabricated on silicon nitride to similar devices on quartz substrates.
KW - Focused-ion beam
KW - HEB
KW - Membrane
KW - Mixer
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U2 - 10.1109/TASC.2005.850124
DO - 10.1109/TASC.2005.850124
M3 - Article
AN - SCOPUS:22044433019
SN - 1051-8223
VL - 15
SP - 928
EP - 931
JO - IEEE Transactions on Applied Superconductivity
JF - IEEE Transactions on Applied Superconductivity
IS - 2 PART I
ER -