Abstract
A novel metal-induced lateral crystallization (MILC) technology has been applied to the formation of improved polycrystalline silicon (poly-Si) piezo-resistors. Nickel has been used for the MILC of amorphous silicon formed by low-pressure chemical vapor deposition. Independent of the physical layout of the resistors, the MILC poly-Si is found to consist of elongated grains with grain lengths comparable to the physical lengths of the resistors. Surface micro-machined micro-channels with integrated pressure sensors using both MILC and conventional low-pressure chemical vapor deposited (LPCVD) poly-Si piezo-resistors have been fabricated and characterized. Compared to the sensors with the LPCVD piezo-resistors, those with the MILC piezo-resistors show 40% higher pressure sensitivity as well as lower temperature-induced drift in both the zero-pressure offset and the pressure sensitivity. Stability in terms of small temporal drift in the zero point offset has been obtained for the MILC pressure sensors.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 281-285 |
| Number of pages | 5 |
| Journal | Sensors and Actuators, A: Physical |
| Volume | 82 |
| Issue number | 1 |
| DOIs | |
| State | Published - May 15 2000 |
| Event | The 10th International Conference on Solid-State Sensors and Actuators TRANSDUCERS '99 - Sendai, Jpn Duration: Jun 7 1999 → Jun 10 1999 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Instrumentation
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Metals and Alloys
- Electrical and Electronic Engineering