TY - GEN
T1 - Experimental observation of multiple excitonic optical Rabi oscillations in a semiconductor
AU - Donovan, M. E.
AU - Schulzgen, A.
AU - Wundke, K.
AU - Binder, R.
AU - Lindberg, M.
AU - Gibbs, H. M.
AU - Khitrova, G.
AU - Peyghambarian, N.
PY - 1999
Y1 - 1999
N2 - Data are presented which show eight excitonic density (Rabi) oscillations in an In0.1Ga0.9As/GaAs multiple quantum well at 5 K. Our time resolved, two-color pump-probe experimental technique for observing these oscillations is described. The quantum well sample geometry and linear spectrum are shown along with data characterizing the pump and probe pulses. Experimental data is shown to be in excellent agreement with our theoretical calculation of exciton density versus time, verifying the important affect of the Coulomb interaction between carriers in renormalizing the Rabi frequency. The theoretical calculations include the two-fold degenerate light-hole, heavy-hole, and valence bands in the Hartree-Fock form of the semiconductor Bloch equations, with all variables selected to conform to the experiment.
AB - Data are presented which show eight excitonic density (Rabi) oscillations in an In0.1Ga0.9As/GaAs multiple quantum well at 5 K. Our time resolved, two-color pump-probe experimental technique for observing these oscillations is described. The quantum well sample geometry and linear spectrum are shown along with data characterizing the pump and probe pulses. Experimental data is shown to be in excellent agreement with our theoretical calculation of exciton density versus time, verifying the important affect of the Coulomb interaction between carriers in renormalizing the Rabi frequency. The theoretical calculations include the two-fold degenerate light-hole, heavy-hole, and valence bands in the Hartree-Fock form of the semiconductor Bloch equations, with all variables selected to conform to the experiment.
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M3 - Conference contribution
AN - SCOPUS:0032596816
SN - 0819430943
T3 - Proceedings of SPIE - The International Society for Optical Engineering
SP - 216
EP - 223
BT - Proceedings of SPIE - The International Society for Optical Engineering
PB - Society of Photo-Optical Instrumentation Engineers
T2 - Proceedings of the 1999 Ultrafast Phenomena in Semiconductors III
Y2 - 27 January 1999 through 29 January 1999
ER -