Experimental determination of quantum dipoles at semiconductor heterojunctions prepared by van der Waals epitaxy: Linear correction term for the electron affinity rule

R. Schlaf; O. Lang; C. Pettenkofer; W. Jaegermann; N. R. Armstrong

doi:10.1116/1.580543

Experimental determination of quantum dipoles at semiconductor heterojunctions prepared by van der Waals epitaxy: Linear correction term for the electron affinity rule

R. Schlaf
, O. Lang
, C. Pettenkofer
, W. Jaegermann
, N. R. Armstrong

Chemistry and Biochemistry

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

We determined the band offset of eight layered heterocontacts consisting of combinations between SnS₂, SnSe₂, WSe₂, MoS₂, MoTe₂, InSe, and GaSe. The comparison of offsets predicted by the electron affinity rule (EAR) revealed a systematic deviation. Due to the absence of structural dipoles in layered materials, this deviation corresponds to the magnitude of the quantum dipoles at the interface which allows the development of a quantum dipole correction term for the EAR. The corrected EAR is still a linear rule. The error margin of the corrected EAR lies well within the experimental error of photoemission spectroscopy experiments, thus proving the general applicability of linear rules for the determination of the band offset.

Original language	English (US)
Pages (from-to)	1365-1370
Number of pages	6
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	15
Issue number	3
DOIs	https://doi.org/10.1116/1.580543
State	Published - 1997

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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Schlaf, R., Lang, O., Pettenkofer, C., Jaegermann, W., & Armstrong, N. R. (1997). Experimental determination of quantum dipoles at semiconductor heterojunctions prepared by van der Waals epitaxy: Linear correction term for the electron affinity rule. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 15(3), 1365-1370. https://doi.org/10.1116/1.580543

Experimental determination of quantum dipoles at semiconductor heterojunctions prepared by van der Waals epitaxy: Linear correction term for the electron affinity rule. / Schlaf, R.; Lang, O.; Pettenkofer, C. et al.
In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 15, No. 3, 1997, p. 1365-1370.

Research output: Contribution to journal › Article › peer-review

Schlaf, R, Lang, O, Pettenkofer, C, Jaegermann, W & Armstrong, NR 1997, 'Experimental determination of quantum dipoles at semiconductor heterojunctions prepared by van der Waals epitaxy: Linear correction term for the electron affinity rule', Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, vol. 15, no. 3, pp. 1365-1370. https://doi.org/10.1116/1.580543

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AB - We determined the band offset of eight layered heterocontacts consisting of combinations between SnS2, SnSe2, WSe2, MoS2, MoTe2, InSe, and GaSe. The comparison of offsets predicted by the electron affinity rule (EAR) revealed a systematic deviation. Due to the absence of structural dipoles in layered materials, this deviation corresponds to the magnitude of the quantum dipoles at the interface which allows the development of a quantum dipole correction term for the EAR. The corrected EAR is still a linear rule. The error margin of the corrected EAR lies well within the experimental error of photoemission spectroscopy experiments, thus proving the general applicability of linear rules for the determination of the band offset.

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Experimental determination of quantum dipoles at semiconductor heterojunctions prepared by van der Waals epitaxy: Linear correction term for the electron affinity rule

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