Experimental and theoretical investigation of femtosecond carrier relaxation in CdSe

B. D. Fluegel; A. Paul; K. Meissner; R. Binder; S. W. Koch; N. Peyghambarian; F. Sasaki; T. Mishina; Y. Masumoto

doi:10.1016/0038-1098(92)90005-T

Experimental and theoretical investigation of femtosecond carrier relaxation in CdSe

B. D. Fluegel, A. Paul, K. Meissner, R. Binder, S. W. Koch, N. Peyghambarian, F. Sasaki, T. Mishina, Y. Masumoto

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

A femtosecond spectral hole burning technique is employed to study the relaxation of nonequilibrium carriers via carrier-carrier and carrier-LO-phonon scattering. Excitation by 70-fs laser pulses several LO phonon energies above the exciton resonance at 10 K in CdSe results in a transient spectral hole that disappears in less than 100 fs. The experiments are compared with a theory that involves numerical evaluation of the semiconductor Bloch equations in the presence of carrier-carrier and carrier-LO phonon scattering.

Original language	English (US)
Pages (from-to)	17-19
Number of pages	3
Journal	Solid State Communications
Volume	83
Issue number	1
DOIs	https://doi.org/10.1016/0038-1098(92)90005-T
State	Published - Jul 1992

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(92)90005-T

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title = "Experimental and theoretical investigation of femtosecond carrier relaxation in CdSe",

abstract = "A femtosecond spectral hole burning technique is employed to study the relaxation of nonequilibrium carriers via carrier-carrier and carrier-LO-phonon scattering. Excitation by 70-fs laser pulses several LO phonon energies above the exciton resonance at 10 K in CdSe results in a transient spectral hole that disappears in less than 100 fs. The experiments are compared with a theory that involves numerical evaluation of the semiconductor Bloch equations in the presence of carrier-carrier and carrier-LO phonon scattering.",

author = "Fluegel, {B. D.} and A. Paul and K. Meissner and R. Binder and Koch, {S. W.} and N. Peyghambarian and F. Sasaki and T. Mishina and Y. Masumoto",

note = "Funding Information: Acknowledgeme-nTth e authorsw ouldl iketo acknowledge supportf rom NSF, OCC, ARO/AFOSR, and JSOP. The collaboratiobne tweent heJ apanesee nd the U.S. teamsw as supportedb y the InternationaSlc ienceR esearchP rogram from the Ministry of EducationS, cience,a nd Cultureo f Japan and by a grant from NEDO, New Energy and IndustriaTle chnologDy evelopmeOntr ganization.",

year = "1992",

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doi = "10.1016/0038-1098(92)90005-T",

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T1 - Experimental and theoretical investigation of femtosecond carrier relaxation in CdSe

AU - Fluegel, B. D.

AU - Paul, A.

AU - Meissner, K.

AU - Binder, R.

AU - Koch, S. W.

AU - Peyghambarian, N.

AU - Sasaki, F.

AU - Mishina, T.

AU - Masumoto, Y.

N1 - Funding Information: Acknowledgeme-nTth e authorsw ouldl iketo acknowledge supportf rom NSF, OCC, ARO/AFOSR, and JSOP. The collaboratiobne tweent heJ apanesee nd the U.S. teamsw as supportedb y the InternationaSlc ienceR esearchP rogram from the Ministry of EducationS, cience,a nd Cultureo f Japan and by a grant from NEDO, New Energy and IndustriaTle chnologDy evelopmeOntr ganization.

PY - 1992/7

Y1 - 1992/7

N2 - A femtosecond spectral hole burning technique is employed to study the relaxation of nonequilibrium carriers via carrier-carrier and carrier-LO-phonon scattering. Excitation by 70-fs laser pulses several LO phonon energies above the exciton resonance at 10 K in CdSe results in a transient spectral hole that disappears in less than 100 fs. The experiments are compared with a theory that involves numerical evaluation of the semiconductor Bloch equations in the presence of carrier-carrier and carrier-LO phonon scattering.

AB - A femtosecond spectral hole burning technique is employed to study the relaxation of nonequilibrium carriers via carrier-carrier and carrier-LO-phonon scattering. Excitation by 70-fs laser pulses several LO phonon energies above the exciton resonance at 10 K in CdSe results in a transient spectral hole that disappears in less than 100 fs. The experiments are compared with a theory that involves numerical evaluation of the semiconductor Bloch equations in the presence of carrier-carrier and carrier-LO phonon scattering.

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Experimental and theoretical investigation of femtosecond carrier relaxation in CdSe

Abstract

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