Excitonic transitions in highly efficient (GaIn)As/Ga(AsSb) type-II quantum-well structures

  • S. Gies
  • , C. Kruska
  • , C. Berger
  • , P. Hens
  • , C. Fuchs
  • , A. Ruiz Perez
  • , N. W. Rosemann
  • , J. Veletas
  • , S. Chatterjee
  • , W. Stolz
  • , S. W. Koch
  • , J. Hader
  • , J. V. Moloney
  • , W. Heimbrodt

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

The excitonic transitions of the type-II (GaIn)As/Ga(AsSb) gain medium of a "W"-laser structure are characterized experimentally by modulation spectroscopy and analyzed using microscopic quantum theory. On the basis of the very good agreement between the measured and calculated photoreflectivity, the type-I or type-II character of the observable excitonic transitions is identified. Whereas the energetically lowest three transitions exhibit type-II character, the subsequent energetically higher transitions possess type-I character with much stronger dipole moments. Despite the type-II character, the quantum-well structure exhibits a bright luminescence.

Original languageEnglish (US)
Article number182104
JournalApplied Physics Letters
Volume107
Issue number18
DOIs
StatePublished - Nov 2 2015

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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