Abstract
We have studied exciton tunneling in (Zn,Cd)Se/ZnSe asymmetric double quantum wells using femtosecond time resolved transmission, photoluminescence and time-resolved photoluminescence measurements. The strong Coulomb correlation as well as Frohlich electron LO-phonon interaction in II-VI semiconductors make the tunneling process significantly different from that in III-VI structures. We observe fast (1 ps) exciton tunneling out of the narrow well, although LO-phonon scattering is forbidden for holes in a single- particle picture. However, our theoretical analysis shows that tunneling of the exciton as a whole entity with the emission of only one LO-phonon is very slow. Instead, the exciton tunnels via an indirect state in a two-step process whose efficiency is dramatically enhanced by Coulomb effects.
| Original language | English (US) |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Pages | 315-321 |
| Number of pages | 7 |
| Volume | 2693 |
| DOIs | |
| State | Published - 1996 |
| Event | Physics and Simulation of Optoelectronic Devices IV - San Jose, CA, USA Duration: Jan 29 1996 → Feb 2 1996 |
Other
| Other | Physics and Simulation of Optoelectronic Devices IV |
|---|---|
| City | San Jose, CA, USA |
| Period | 1/29/96 → 2/2/96 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering